Power Electronics ♦ news digest


and software but changing the way services are delivered to and accessed by the common man; these include 27 Mission Mode Projects (MNPs). Eight of these components constitute NeGP. Of these, the Government of India has already approved 24 MNPsen.


Of the 1100 services targeted under NeGP, over 600 can be accessed across the length and breadth of the country. These services have been enabled by the Line Departments under the various Mission Mode Projects of NeGP as well as by State Governments that have chosen to leverage the digital service delivery infrastructure created under NeGP.


One of the projects includes the “Nanotechnology Initiative Program” which has been concentrating on institutional capacity building and infrastructure for Research & Development and Human Resource Development.


Under this program two major nanoelectronics centers at the Indian Institute of Technology, Bombay and Indian Institute of Science, Bangalore have been set up. A nanometrology laboratory at National Physical Laboratory, Delhi is currently being set up.


Two major projects have been initiated recently at IIT Kharagpur and IIT Delhi. The project at IIT Kharagpur will be in creating a Molecular Beam Epitaxy (MBE) cluster too. This will focus on creating an epitaxial based nano-semiconductor infrastructure and the development of high frequency devices. The project at IIT Delhi will be creating a facility for non-silicon based technologies for nano fabrication in the area of Nanomagnetics, Nanophotonics, Nanophotovoltaics,


Nanoelectronics, Nanomechanics, Biosensors, and Mesoscale Devices.


Warwick University Welcomes 1800C furnace for SiC Device Development


The £10.5m Energy Efficiency project will see the furnace being used to push the boundaries of what is known about SiC and how it functions under such intense temperatures.


Micross & SemiSouth To Develop SiC Power Devices


The two firms will develop hermetic packaging aimed at the military, aerospace and down- hole drilling markets for ultra high temperature applications to 260°C.


Micross Components and SemiSouth Laboratories are collaborating to expand SemiSouth’s line of Silicon Carbide (SiC) Power JFETs and Schottky


January / February 2011 www.compoundsemiconductor.net 159


This furnace will raise temperatures in Mawby’s lab to a blistering 1800oC, 500oC higher than traditional silicon furnaces. It will be used to make Power Semiconductor devices in Silicon Carbide (SiC), a material which is revolutionizing electrical energy management.


Mawby said, “We are delighted to have this new furnace; it will allow us to really push the boundaries of what we know about silicon carbide and how it functions under such intense temperatures. This will allow us as a university to make great strides in developing the material for use in energy management and hopefully find a means of using the material to run electrical energy in a much more efficient manner.”


“Silicon Carbide is the next-generation semiconducting material. It is very similar to silicon but a much smaller piece of the material can perform the same functionality, meaning space and weight are saved, and less heat is lost.”


This new equipment has been funded by the Science City Research Alliance (SCRA) Energy Efficiency Project. The Energy Efficiency Project is part of a larger investment by Advantage West Midlands and the European Regional Development Fund in the research infrastructure of the West Midlands region, which unites the University of Birmingham and the University of Warwick in a strategic research partnership – SCRA – formed under the Birmingham Science City initiative.


The £10.5m Energy Efficiency project has already invested £1.8m in a state of the art cleanroom at the University of Warwick which has the capability to manufacture the complete Silicon Carbide device process.


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