Novel Devices ♦ news digest
IBM business partners support a comprehensive set of solutions, including RF design services, digital design services, libraries, mixed signal IP cores, nonvolatile memory, reference flows, simulation tools, test and packaging services. The Ready for IBM Technology foundry program was launched in 2002, and since that time over 30 companies have been awarded Ready for IBM Technology.
Tektronix Component Solutions has over 40 in- house ASIC designers developing high-complexity ASICs for customers and Tektronix instruments. The organization’s depth of experience in SiGe enables customers to reduce the risk inherent in complex IC development projects while achieving next-generation performance levels.
From circuit and physical design to product engineering and foundry relationship management, Tektronix Component Solutions’ capabilities provide a turnkey option for ASIC development and a seamless connection to IC packaging services. Tektronix Component Solutions designs performance ASICs for the measurement, military, aerospace, and high-speed communications markets, with a focus on signal acquisition, generation, conversion, and conditioning.
Complementing these ASIC design capabilities, Tektronix Component Solutions has over 60 engineers and 32,000 square feet of Class 10,000 manufacturing devoted to the development, assembly and test of high-performance custom IC packages and modules, including devices for classified defense programs.
With an emphasis on low-volume, high-complexity applications, the organization leverages deep experience across a broad base of material, process and interconnect technologies to meet the performance, reliability and quality requirements of customers in the instrumentation, military, aerospace, medical and high-speed communications markets.
Fig. 1: Atomic force microscope image of GaAs quantum dots used in this research.
In this research, gallium arsenide (GaAs) quantum dots were embedded in aluminum gallium arsenide (AlGaAs) by the droplet epitaxy method. This method was originally developed by NIMS.
A distinctive feature of the quantum dots, the length of the crystal lattice is perfectly matched between the guest and host materials, resulting in a clean quantum structure.
The scientists observed charged excitons by measuring the photon emission signals from single quantum dots. In particular, when the stabilization
January / February 2011
www.compoundsemiconductor.net 173
Pack Electrons in a Nano Box To Control Quantum Confinement
This development should make it possible to develop semiconductor non-linear devices which enable stable drive with low power consumption.
Researchers from the National Institute for Materials Science (NIMS) and Hokkaido University, have succeeded in controlling the few-particle quantum states of a gallium arsenide (GaAs) quantum dot, and changing its correlation energies.
The team was headed by Takashi Kuroda, Senior Researcher, and Marco Abbarchi, Researcher, of the Quantum Dot Research Center, National Institute for Materials Science. The team hopes this achievement will make it possible to develop semiconductor non-linear devices which enable stable drive with low power consumption.
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176