news digest ♦ LEDs
This series is an opportunity to learn about the latest technology and manufacturing trends, key challenges in LED cost reduction and productivity challenges, and technology demands. The schedule is as follows:
February 9: Substrates & Raw Materials: Status quo?; Sapphire, SiC; Pending crunch?; Indium/ Gallium; Trusted friend!; Silicon progress
March 2: Front End Manufacturing: Capacity explosion! Epitaxy; Efficiency gains?; Fixing droop effect; Process evolution?; Patterning, Laser lift-off etc.
March 23: Testing, Binning and Packaging: Submount choices?; Si vs. Ceramic; Good results?; Testing & Binning; Collective packaging!; C2W, WLP, WL Optics
The webinars will be presented by Philippe Roussel of Yole Développement. He leads the Compound Semiconductors market analysis department and also led the development of the 2008 Yole LED Manufacturing Report.
Yole Développement analyzes progress in the microtechnologies and compound semiconductor markets. The firm engages in in-depth analysis of the HB LED market and will issue reports on all key aspects of LED manufacturing later this year.
Dow Corning Joins the imec GaN Affiliation Program
The firms will work together to bring GaN epi- technology on silicon wafers to a manufacturing scale.
Dow Corning has formalized an agreement to enter the imec multi-partner industrial R&D program on GaN semiconductor materials and device technologies.
The program focuses on the development of the next generation GaN power devices and LEDs. The collaboration between Dow Corning and imec will concentrate on bringing the GaN epi-technology on silicon wafers to a manufacturing scale.
Due to the combination of superior electron 58
www.compoundsemiconductor.net January / February 2011
mobility, higher breakdown voltage and good thermal conductivity properties, GaN/AIGaN heterostructures offer a high switching efficiency for the next generation power and RF devices compared to the current devices based on silicon. A process for high quality GaN epi-layers on Si substrates is key in obtaining superior power & RF devices.
Accurate control of the epi-growth process to master substrate bow, epi-layer defectivity and uniformity while maintaining high epi-reactor throughput are needed to reduce the overall technology cost. Imec has pioneered GaN epi- growth on sapphire, SiC and silicon substrates from 2 to 6 inch substrate sizes and currently focuses on developing GaN epi-layers on 8 inch silicon substrates.
Leveraging the economics of scale and compatibility with high throughput and high capacity 8 inch silicon wafer based process technology will further reduce the cost of GaN devices and LEDs.
As a leading producer of SiC wafers and epitaxy, Dow Corning is leveraging its capability in electronic materials technology and quality supply to bring next generation materials technology to global device manufacturers.
“By joining the imec GaN Affiliation Program, Dow Corning will rapidly expand its substrate
product portfolio with high quality and affordable GaN epi-wafers for power, RF and LED markets” says Tom Zoes, Global Director, Dow Corning Compound Semiconductor Solutions.
“We are delighted to welcome Dow Corning as a partner in our GaN Affiliation Program. Teaming up with imec’s epitaxy and device researchers within our multi-partner environment creates a strong momentum to bring this technology to market,” says
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