RF Electronics ♦ news digest
* Si, GaAs, InGaAs, InP and SiGe IC products * Unique MMIC processes: HMIC and GMIC
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Headquartered in Lowell, Massachusetts, M/A-COM Tech builds on some 60 years of experience to develop and manufacture active and passive products, including Si and compound semiconductors from facilities in Lowell, MA, and Torrance, CA. Infrastructure products continue to be provided by the company’s facility in Cork, Ireland, and Laser Diode products in Edison, New Jersey.
Avago Unveils PAs Optimized for Cellular Infrastructure
The two new power amplifiers (PAs) are based on the firm’s proprietary 0.25 micron GaAs enhancement-mode pHEMT technology. They deliver high linearity and low power dissipation in an industry standard package and will enable a single design to support multiple frequencies and markets.
Avago Technologies, a leading supplier of analog interface components for communications, industrial and consumer applications, has introduced two new gain block solutions that expand its high- performance power amplifier family targeting cellular infrastructure applications.
The new MGA-31589 and MGA-31689 0.5-watt gain blocks feature high linearity, high gain, superior gain flatness and low power dissipation. The MGA- 31589 gain block addresses cellular and WiMAX wireless base station and other wireless systems operating between 450 to 1500 MHz, while the MGA-31689 device addresses these applications operating between 1500 to 3000 MHz.
The MGA-31x89 power amplifier family is optimized for frequency in order to deliver improved performance across all the major cellular bands — GSM, CDMA, and UMTS — plus next-generation LTE bands. The new gain blocks join with the 0.25- watt MGA-31189 and MGA-31289 devices and the 0.10-watt MGA-31389 and MGA-31489 devices to serve applications from 50 to 3000 MHz.
MGA-31x89 devices are all available in the compact, industry-standard SOT-89 package. Sharing a common footprint and PCB layout allows a single design to support multiple frequencies and geographic markets with a choice of output power. The gain blocks can also replace existing market solutions as a pin-to-pin, drop-in replacement offering better linearity and power performance.
The devices’ high gain can reduce the total number of RF stages needed. The performance gains of the MGA-31x89 family are made possible by Avago’s proprietary, 0.25 µm GaAs Enhancement-mode pHEMT semiconductor process.
MGA-31589 and MGA-31689 Performance
At the typical operating condition of 5V and 146 mA, the MGA-31589 device delivers performance of 20.4 dB Gain, 45.3 dBm Output Third Order Intercept Point (OIP3), 27.2 dBm Output Power at 1 dB Gain Compression (P1dB) and 1.9 dB noise figure at 900 MHz. In addition, the MGA-31589 device delivers superior gain flatness of less than 0.2 dB across 100 MHz bandwidth.
At the typical operating condition of 5V and 168 mA, the MGA-31689 device delivers performance of 18.1 dB Gain, 44.9 dBm Output Third Order Intercept Point (OIP3), 27.6 dBm Output Power at 1 dB Gain Compression (P1dB) and 1.9 dB noise figure at 1900 MHz. The MGA-31689 device also delivers superior gain flatness of less than 0.2 dB across 100 MHz bandwidth.
January / February 2011
www.compoundsemiconductor.net 99
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