Power Electronics ♦ news digest
with 20KV isolation and 2Mbit/s data transmission rates designed to comply with ATEX and ICEex certifications for electrical equipment used in hazardous areas, as well as IP65 standards for environmental sealing.
load rating of 10GRMS, which is important for transportation applications.
The optoisolator ‘s input diode exhibits a forward voltage of 1.8V (max) @IF = 20mA; with a continuous forward current of 50mA. Reverse current is 100µA (max) @VR = 2.0V. with reverse voltage of 3.0V. The output IC operates with 7V supply voltage with 40mW power dissipation.
Capable of isolating voltages up to 20kV, the OPI1268S Series also provides a voltage spike immunity of 30KV/µS dv/dt. Creepage distance/air path is 24mm. Operating temperature range is from -50°C to +100°C.
Designated the OPI1268S Series, the high speed optoisolator is designed for high voltage power isolation in applications requiring sealing against dust and liquids, as well as in electrical equipment in potentially explosive atmospheres, such as transportation systems, hybrid vehicles, medical devices, and industrial control/safety systems.
According to Rodney Bailey, VP optoelectronic component solutions for TT electronics OPTEK Technology, the OPI1268S optoisolator is the only high voltage device on the market with this comprehensive range of certifications “Designed to carry a UL, VDE rating, ATEX/IECex certifications, and environmental sealing to IP65, the OPI1268S Series can be specified by our customers for a wide range of applications in potentially hazardous environments that require high voltage isolation.”
The OPI1268S Series optoisolator is comprised of a high-efficiency GaAIAs (Gallium Aluminum Arsenide) LED with a peak wavelength of 850nm, optically coupled to a photodiode that detects incoming modulated light and converts it to a proportionate current.
The device’s high-gain linear amplifier is temperature-, current-, and voltage-compensated, resulting in a highly stable digital output with an open collector inverter configuration that delivers DC and AC voltage isolation between the input and output circuitry while providing TTL signal integrity with a data transfer rate of 2Mbits/s and a typical propagation delay (tPHL-tPLH) of ≤ 50ns.
The OPI1268S optoisolator also features a 6-axis
The OPI1268 device measures 27.94mm x 6.35mm x 8.89mm with a five-lead configuration (cathode, anode, Vcc, output and ground). The OPI1268S Series of optoisolators are UL-certified under file #E58730. Certifications for ATEX/ICEex and IP65 are pending.
GeneSiC Powers Forward With Project from NASA
The firm has won a Phase I SBIR award entitled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” in support of future Venus exploration missions.
GeneSiC announces its selection towards development of high temperature power devices for NASA applications. These devices will be optimized for operation under Venus-like ambients (500 °C surface temperatures) for use in motor control power modules.
GeneSiC Semiconductor, a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration (NASA) for a Phase I SBIR award. This SBIR project is focused on the development of Monolithic Integrated SiC JBS diode-Super Junction Transistor (MIDSJT) devices for operation under Venus-like ambients (500 °C surface temperatures).
January / February 2011
www.compoundsemiconductor.net 161
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