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news digest ♦ Telecoms


was easy to operate. We are confident that Russian service providers will see the value in Infinera’s next generation solution, offering an architecture that’s simple and reliable due to photonic integration.”


“We are pleased to complete this trial with ZNIIS,” adds Chris Champion, vice president EMEA sales. “The success of this demonstration is a milestone for Infinera. We demonstrated that our next generation DWDM optical networking solution, the Infinera DTN-X, is certified and available to the Russian market.”


Infinera claims the DTN-X is the first to deliver 500 Gb/s long- haul super-channels based on Photonic Integrated Circuits (PICs) and the FlexCoherent Processor, scaling transport capacity without scaling operational complexity.


Integra introduces 100MHz - 1GHz GaN HEMT


The gallium nitride module is suited to Broadband applications


Integra Technologies has launched the IGN0110UM100, a dual- lead packaged GaN high electron mobility transistor (HEMT).


MAAL-010528


This LNA delivers higher gain and linearity performance over the 8.0 to 12.0 GHz frequency band than many competing parts, providing customers with system advantages for their LNA requirements.


Packaged in a compact 3 x 3mm PQFN surface mount and having a single, positive bias supply, the device allows customers a simple and elegant LNA solution.


The MAAL-010528 GaAs MMIC LNA provides a nominal gain of 20dB with excellent gain flatness, high OIP3 linearity of 26 dBm, and a mid-band noise figure supply of 1.6dB.


This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band.


Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified operation is with Class AB bias. It is also operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR.


All devices are 100 percent screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. Integra says the use of external tuners is not permitted during screening.


The part features a self-bias architecture which requires the customer to apply only a single positive supply. In addition, the device is internally matched to 50 Ω input/output. M/A-COM Tech says this makes the MAAL-010528 well suited for multiple radar and communication applications.


“The MAAL-010528 is ideal for customers looking for low noise figure and high linearity for their X-Band Solutions”, says Paul Beasly, Product Manager. “The excellent performance and very small, fully matched PQFN package make this LNA a simple and elegant solution for multiple applications.”


Jenoptik experiences surge


in demand for GaP devices The gallium phosphide based microoptic products are primarily used in the medical industry


Microlenses, microlens arrays, and diffractive optics are used for homogenisation of laser beams for laser eye surgery and


96 www.compoundsemiconductor.net March 2013


M/A-COM Tech launches GaAs LNA for V-sat, radar and microwave


The gallium arsenide amplifier is claimed to offer excellent performance for easy and efficient implementation in X-band applications


M/A-COM Technology Solutions has introduced an X-Band extension to its Low Noise Amplifier (LNA) family.


The MAAL-010528 is designed for customers who need a quick LNA solution for V-sat, radar and microwave applications.


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