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100 mm SiC WAFER


150 mm SiC WAFER


CREE SiC AND GaN MATERIALS


MATERIALS PORTFOLIO


Supported diameters: - 76.2 mm - 100.0 mm - 150.0 mm


SiC substrates: - n-type - p-type - High Purity SI


SiC epitaxy: - n-type - p-type - thick epitaxy


GaN epitaxy: - GaN, AlN, AlGaN, InGaN, SiN layers - HEMT structures


INDUSTRY-LEADING PORTFOLIO, INNOVATION AND SCALE


With more than 25 years of development and manufacturing experience, Cree is driving innovation with the industry’s broadest range of SiC and GaN materials. Delivering substrate and epitaxy options in up to 150 mm diameters, Cree provides a vertically integrated materials product offering combining industry-leading volume, scale, quality and vast intellectual property portfolio.


When you partner with Cree you get the best materials and the brightest innovation.


Learn how Cree can revolutionize your designs at cree.com/materials or contact us at materials_sales@cree.com or +1 800 313 5300.


Cree materials are ISO/TS 16949 certifi ed.


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