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Power Electronics ♦ news digest Aixtron AIX G5+ wins CS


Manufacturing Award 2013 The compound semiconductor industry commended the firm’s gallium nitride-on-silicon (GaN-on-Si) system. The tool is designed to handle five 200 mm wafers per production run providing high throughput and high yield growth of GaN devices on large area substrates


Aixtron SE has announced that it has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for GaN-on-silicon epi-wafer growth.


The Award recognises key areas of innovation surrounding the chip manufacturing process from research to completed device, focusing on the people, processes and products that drive the industry forward.


The AIX G5+ is designed to handle five 200 mm wafers per production run providing high throughput and high yield growth of GaN devices on large area substrates.


EPC to present GaN technology and applications


at APEC 2013 The firm’s CEO and applications experts will conduct a half-day seminar and technical presentations on gallium nitride FET technology and applications


Efficient Power Conversion Corporation (EPC), an innovator in enhancement-mode GaN on silicon (eGaN) power FETs, will be presenting an educational seminar and several application- focused technical presentations at APEC 2013.


The Applied Power Electronics and Exposition Conference (APEC) will be held in Long Beach, California from March 17th to 21st.


APEC, focuses on the practical and applied aspects of the power electronics business. It is one of the leading conferences for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment.


Frank Schulte, Aixtron (on the right), receives the Award from Richard Stevenson, CS magazine


Editor Richard Stevenson from Compound Semiconductor (CS) magazine presented the award yesterday, March 4th, 2013 to Aixtron’s Vice President Europe Frank Schulte.


“GaN-on-silicon technology promises to revolutionise power electronics and slash the cost of LEDs, spurring a lighting revolution,” he commented at the award ceremony in conjunction with the CS Europe exhibition in Frankfurt, Germany. “One manufacturing tool that I am tipping to play a major role in driving both these changes is the Aixtron AIX G5+, a reactor that combines high throughput with impressive levels of uniformity.”


Andreas Toennis, Chief Technology Officer at Aixtron SE, comments, “Delivering results on the leading edge of GaN- on-Si technology, we are very pleased that our achievements are recognised by the compound semiconductor industry through this prestigious prize. The AIX G5+ reactor has been specifically designed to produce GaN based devices on silicon without compromising performance or yield compared to processes on sapphire substrates.”


“GaN-on-Si is a very promising technology for future power electronics applications and high brightness LED manufacturing,” Frank Schulte adds.


“We are honoured that the technical review committee of APEC 2013 has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers,” says Alex Lidow, EPC’s co-founder and CEO.


Educational Seminar


GaN Transistors for Efficient Power Conversion Sunday, March 17th (S.7, 2:30 p.m. - 6:00 p.m.)


Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including high frequency envelope tracking (ET), Intermediate Bus Converters (IBC), and wireless power transmission will be presented. The seminar will conclude with a look at the future of this emerging displacement technology.


Technical Presentations Featuring GaN FETs by EPC Experts: Roundtable Discussion


“Wide band-gap semiconductors - Prime time or promises?” Presenter: Alex Lidow Tuesday, March 19th (Session 2, 5pm - 6:30 pm)


March 2013 www.compoundsemiconductor.net 113


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