Power Electronics ♦ news digest
Electric customers,” comments Tom Shockley, El Paso Electric Chief Executive Officer. “We also want to thank Element Power Solar for its dedication and commitment to bringing this project to fruition.”
The Macho Springs project was the result of a Request for Proposal (RFP) by El Paso Electric to include additional electric peaking resources in its current energy mix.
First Solar will construct the Macho Springs facility using its advanced thin-film CdTe PV modules. First Solar says its PV systems have the smallest carbon footprint and shortest energy payback time of any PV technology on the market today.
First Solar completed New Mexico’s 30 MW Cimarron Solar facility in 2011, which is owned by Southern Company and Turner Renewable Energy. First Solar also completed 22 MW of solar projects in the state for PNM Resources, Inc. in 2011 and has been selected to build another 21.5 MW for PNM for expected completion in late 2013.
temperature capablability, the SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/ volume of power electronics.
These devices are targeted for use in a wide variety of applications including server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, industrial motor control systems, and downhole applications.
Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times.
These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15V IGBT gate drivers, unlike other SiC switches.
While offering compatibility with SiC JFET drivers, Junction Transistors can be easily paralleled because of their matching transient characteristics.
Power Electronics
GeneSiC raises the bar in high frequency and
temperature applications The silicon carbide junction transistors will increase conversion efficiency and reduce the size, weight and volume of power electronics
GeneSiC Semiconductor, a pioneer and global supplier of a broad range of SiC power semiconductors has announces the immediate availability of a family of 1700V and 1200V SiC Junction Transistors.
“As power system designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance and production uniformity. Utilising the unique device and fabrication innovations, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” says Ranbir Singh, President of GeneSiC Semiconductor.
The 1700V junction transistors come in 110 mΩ (milliOhms) (GA16JT17-247), the 250 mΩ (GA08JT17-247) and the 500 mΩ (GA04JT17-247).
There are two new offerings in the 1200 V junction transistors ; the 220 mΩ (GA06JT12-247) and the 460 mΩ (GA03JT12-247).
All these devices have a Tjmax of 175oC and the turn On/Off have typical rise and fall times of less than 50 nanoseconds.
All devices are 100 percent tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant TO- 247 packages. The devices are immediately available from GeneSiC’s Authorised Distributors.
GeneSiC`s hybrid SiC / Silicon modules open new
doors The firm’s low Inductance, higher temperature capable silicon carbide mini-modules enable 175 degree C operation are suited to industrial motors, solar inverters and power grid applications
GeneSiC silicon carbide junction transistor Incorporating high voltage, high frequency and high-
GeneSiC Semiconductor is marketing its second generation hybrid mini-module using 1200V/100A SiC Schottky rectifiers with rugged silicon IGBTs - the GB100XCP12-227, shown
March 2013
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