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Equipment and Materials ♦ news digest Equipment and


Materials SemiSouth SiC


manufacturing and test


equipment to be sold off Following the closure of the silicon carbide device manufacturer several months ago, semiconductor fabrication, electronic test , dicing and final assembly equipment are to be disposed of


Heritage Global Partners (HGP) and The Branford Group have announced their upcoming major global webcast auction sale of late model SiC semiconductor manufacturing assets and testing equipment of SemiSouth Laboratories.


SemiSouth was founded in 2001 by former Mississippi State University (MSU) faculty member Jeffrey Casady and current MSU electrical and computer engineering professor Michael Mazzola. Before its closure, the company manufactured SiC devices for high-power, high-efficiency, harsh-environment power management and conversion applications.


HGP is an asset advisory and auction services and a wholly owned subsidiary of Counsel RB Capital. The Branford Group, deals with surplus industrial machinery, equipment auctions and valuations.


The assets being sold include: semiconductor fabrication equipment, electronic test equipment, dicing equipment and final assembly equipment.


“Our upcoming sale, in partnership with The Branford Group, features SemiSouth’s wide array of SiC manufacturing and related testing equipment, representing an ideal opportunity for interested parties to take advantage of these late model state- of-the-art industry assets,” says Craig Thompson, Director of Sales at Heritage Global Partners.


“The SiC materials and electrical components being sold via our global webcast are ideal for high-power, high-efficiency, harsh-environment power management and conversion applications. Typical applications range from power conversion to variable-speed drives to high-power, harsh-environment military and aerospace applications,” adds William Gardner, President of The Branford Group.


A full listing of the items up for sale can be found online at: www.hgpauction.com and www.thebranfordgroup.com.


The global webcast auction is scheduled to begin at 10 am CT on April 4th, 2013.


Interested bidders are encouraged to attend the on-site preview April 3rd, between 9 am and 4 pm CT at 201 Research Boulevard on the campus of Mississippi State University in Starkville, Mississippi.


Aixtron AIX G5+ wins CS


Manufacturing Award 2013 The compound semiconductor industry commended the firm’s gallium nitride-on-silicon (GaN-on-Si) system. The tool is designed to handle five 200 mm wafers per production run providing high throughput and high yield growth of GaN devices on large area substrates


Aixtron SE has announced that it has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for GaN-on-silicon epi-wafer growth.


The Award recognises key areas of innovation surrounding the chip manufacturing process from research to completed device, focusing on the people, processes and products that drive the industry forward.


Frank Schulte, Aixtron (on the right), receives the Award from Richard Stevenson, CS magazine


Editor Richard Stevenson from Compound Semiconductor (CS) magazine presented the award yesterday, March 4th, 2013 to Aixtron’s Vice President Europe Frank Schulte.


“GaN-on-silicon technology promises to revolutionise power electronics and slash the cost of LEDs, spurring a lighting revolution,” he commented at the award ceremony in conjunction with the CS Europe exhibition in Frankfurt, Germany. “One manufacturing tool that I am tipping to play a major role in driving both these changes is the Aixtron AIX G5+, a reactor that combines high throughput with impressive levels of uniformity.”


Andreas Toennis, Chief Technology Officer at Aixtron SE, comments, “Delivering results on the leading edge of GaN- on-Si technology, we are very pleased that our achievements are recognised by the compound semiconductor industry through this prestigious prize. The AIX G5+ reactor has been specifically designed to produce GaN based devices on silicon without compromising performance or yield compared to processes on sapphire substrates.”


“GaN-on-Si is a very promising technology for future power electronics applications and high brightness LED manufacturing,” Frank Schulte adds.


March 2013 www.compoundsemiconductor.net 123


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