Power Electronics ♦ news digest
GaN Systems expands UK base
The developer of gallium nitride power switching semiconductors has set up a new office in response to increasing demands and a growing base of European partners
GaN Systems has opened a new office facility located in Reading, England.
This expansion of the company’s European operations will aid the firm in continuing to impact key industries, like manufacturing and automotive, where the need for clean technology power conversion applications continue to grow.
GaN Systems’ head office is currently located in Ottawa, Canada.
“GaN Systems new office facility comes in response to a strong pull from our growing base of European customer partners,” says Geoff Haynes, the company’s UK based VP Business Development. “The company has a strong focus on collaborating across the manufacturing value chains for global power electronics markets to accelerate the adoption, and drive the cost of manufacture of GaN components. That can only be achieved through a strong local technical presence.”
In addition to sales offices, the new location will include technical support and seminar facilities.
Richardson RFPD reveals
GaN website resource The website, focused exclusively on gallium nitride, includes GaN products from Empower RF Systems, M/A-COM Technology Solutions, Microsemi, Nitronex, TriQuint, and UMS
Richardson RFPD has announced the launch of a new website resource focused exclusively on GaN.
GaN technology is suited to meet today’s size, weight and power (“SWaP”) demands better than older technologies like GaAs, because GaN provides RF system engineers with the flexibility to achieve significantly higher power and efficiency, with lower part count, board space and resultant cost.
Several Richardson RFPD suppliers are driving innovation in the development of GaN discrete devices and modules , and the new GaN technology section of the website offers a range of power transistors, power amplifiers and switches from industry-leading manufacturers
The featured GaN products are suitable for a wide range of broadcast transmission, aerospace and defence, commercial and military avionics and radar, communications, test and measurement, small cell, and wireless infrastructure applications.
In addition to product and supplier information, the new GaN website section offers links to an extensive list of technical
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resources, from applications notes to brochures, selector guides, videos and white papers.
Richardson RFPD, Inc., an Arrow Electronics company, is an innovator in the RF and wireless communications, power conversion and renewable energy markets. Relationships with the industry’s top component suppliers enable Richardson RFPD to meet the total engineering needs of each customer. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s global design centres and technical sales team provide support for all aspects of customers’ go to market strategy, from prototype to production.
Lattice location determines
trace nitrogen dopants in SiC A new technology is expected to contribute to the optimisation of the doping process of silicon carbide. The SC-XAFS techniques could also be applied to the analysis of other wide- gap semiconductors such as GaN (gallium nitride)
Researchers have developed an instrument for X-ray absorption fine structure (XAFS) spectroscopy equipped with a superconducting detector.
The study was conducted by Masataka Okubo and others from the Research Institute of Instrumentation Frontier of the National Institute of Advanced Industrial Science and Technology, in collaboration with the Institute of Materials Structure Science of the High Energy Accelerator Research Organisation and Ion Technology Centre Co., Ltd.
With the instrument, the researchers say they have realised, for the first time, local structure analysis of nitrogen dopants (impurity atoms at a very low concentration), which were introduced by ion plantation in SiC, a wide-gap semiconductor, and are necessary for SiC to be an-type semiconductor.
Wide-gap semiconductor power devices, which enable reduction of power loss, are expected to contribute to the suppression of CO2 emissions. To produce devices using SiC, one of the typical wide-gap semiconductor materials, introduction of dopants by ion plantation is necessary for the control of electrical properties.
The dopant atoms need to be located in the particular lattice site in a crystal. However, there has not been a microstructural analysis method.
SC-XAFS was used to measure the XAFS spectra of the nitrogen dopants at a very low concentration in the SiC crystal, and the substitution site of the nitrgoen dopants was determined by comparison with a first-principle calculation. In addition to SiC, SC-XAFS can be applied to wide-gap semiconductors such as GaN and diamond, magnets for low- loss motors, spintronics devices, solar cells, etc.
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