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news digest ♦ Power Electronics


photonics industry. The company produces high precision coatings for applications in the fields of high power lasers, high power beam combination, ultrafast lasers, optical measurement systems, telecommunications, aerospace and scientific research.


Integra introduces 100MHz - 1GHz GaN HEMT


The gallium nitride module is suited to Broadband applications


Integra Technologies has launched the IGN0110UM100, a dual- lead packaged GaN high electron mobility transistor (HEMT).


candidate for the job. Mike’s proven leadership will help Cree drive innovation and accelerated adoption of LED lighting.”


Prior to his appointment as Interim CFO, McDevitt held several key leadership roles at Cree including Director of Sales Operations from 2011-2012, Director of Financial Planning from 2005-2011 and Corporate Controller from 2002-2005.


Yole: Inverter market to


rocket to $71 billion in 2020 SiC, used in PV inverters, will have a market size of $43 million and GaN JFETs will be introduced in 2013


Yole Développement has announced its “Inverter market trends for 2013 - 2020 and major technology changes” report.


The publication provides a focus on the six most attractive applications (PV, wind turbines, EV/HEV, rail traction, motor drives and UPS) and a new analysis on power stack trend from the firm’s previous report.


There is significant growth in the inverter market, which reached $45 billion in 2012 for motion and conversion.


Energy related topics have become more and more important in 2012 - vehicle electrification, renewable energies, electricity transportation, and as a direct result, the power electronics market has increased.


This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band.


Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified operation is with Class AB bias. It is also operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR.


All devices are 100 percent screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. Integra says the use of external tuners is not permitted during screening.


Cree takes on Mike McDevitt


as Chief Financial Officer McDevitt brings more than two decades of finance and operations leadership and has served as Vice President and Interim CFO of the company since May 22nd, 2012


Cree has appointed Mike McDevitt as Executive Vice President and Chief Financial Officer (CFO), which became effective last week.


“Mike is an invaluable member of the Cree team and I am very pleased to announce his appointment as CFO,” says Chuck Swoboda, Cree chairman and CEO. “After conducting an exhaustive national search, we realised Mike is the best


120 www.compoundsemiconductor.net March 2013


This growth is driven by a number of factors. These include high volume and cost pressure applications such as EV / HEV and high added-value markets like renewable energies and rail traction.


“We estimate the inverter market to be $45 billion in 2012 and to reach $71 billion by 2020. A total of more than 28 million units were shipped in 2012 and we estimate that will grow to 80 million units in 2020,” explains Brice Le Gouic, Activity Leader, Power Electronics at Yole Développement.


Thus, the main components of inverter, passive and semiconductor modules (that we will find in power stacks) represent enticing industries. The power module market was $1.9 billion in 2012 and passive components achieved a market size of more than $4 billion, including capacitors, resistors, connectors, busbars and - newly added in this updated report - magnetic components (inductors and transformers).


As expected, wide band gap semiconductor devices have also started to penetrate those high-end market segments:


SiC is present in PV inverters – a total market size of $43 million primarily driven by diodes inmicro-inverters, but also by JFETs – and GaN which should be introduced in 2013.


Semiconductor technological developments continue to evolve and sharpen inverter performance


Yole’s 2012 investigation confirmed that semiconductor improvements enabled more efficient conversion, lighter


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