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news digest ♦ Power Electronics below. SemiSouth SiC manufacturing and test


equipment to be sold off Following the closure of the silicon carbide device manufacturer several months ago, semiconductor fabrication, electronic test , dicing and final assembly equipment are to be disposed of


Heritage Global Partners (HGP) and The Branford Group have announced their upcoming major global webcast auction sale of late model SiC semiconductor manufacturing assets and testing equipment of SemiSouth Laboratories.


The performance-price point at which this product is being released allows many power conversion applications to benefit from the reduction of the cost, size, weight and volume. GeneSiC says neither silicon IGBT, silicon rectifier solutions, nor pure SiC modules can offer all of these attributes.


The module is targeted for use in a wide variety of applications including industrial motors, solar inverters, specialised equipment and power grid applications.


The SiC Schottky/silicon IGBT mini-modules (Co-packs) offered by GeneSiC are made with silicon IGBTs that exhibit positive temperature coefficient of on-state drop, robust punchthrough design, high temperature operation and fast switching characteristics that are capable of being driven by commercial, commonly available 15V IGBT gate drivers.


The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop of 1.9V at 100A and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low profile design that can be used very flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element.


“We listened to our key customers since the initial offering of this product almost 2 years back. This second generation 1200 V/100 A Co-pack product has a low inductance design that is suitable for high frequency, high temperature applications. The poor high temperature and reverse recovery characteristics of Silicon diodes critically limits the use of IGBTs at higher temperatures. GeneSiC’s low VF, low capacitance SiC Schottky Diodes enable this breakthrough product,” says Ranbir Singh, President of GeneSiC Semiconductor.


With a positive temperature coefficient on VF and a maximum junction temperature of 1750C, the products have typical turn- on energy losses of 23 microJoules.


All devices are fully tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard SOT-227 packages.


The devices are immediately available from GeneSiC’s authorised distributors.


SemiSouth was founded in 2001 by former Mississippi State University (MSU) faculty member Jeffrey Casady and current MSU electrical and computer engineering professor Michael Mazzola. Before its closure, the company manufactured SiC devices for high-power, high-efficiency, harsh-environment power management and conversion applications.


HGP is an asset advisory and auction services and a wholly owned subsidiary of Counsel RB Capital. The Branford Group, deals with surplus industrial machinery, equipment auctions and valuations.


The assets being sold include: semiconductor fabrication equipment, electronic test equipment, dicing equipment and final assembly equipment.


“Our upcoming sale, in partnership with The Branford Group, features SemiSouth’s wide array of SiC manufacturing and related testing equipment, representing an ideal opportunity for interested parties to take advantage of these late model state- of-the-art industry assets,” says Craig Thompson, Director of Sales at Heritage Global Partners.


“The SiC materials and electrical components being sold via our global webcast are ideal for high-power, high-efficiency, harsh-environment power management and conversion applications. Typical applications range from power conversion to variable-speed drives to high-power, harsh-environment military and aerospace applications,” adds William Gardner, President of The Branford Group.


A full listing of the items up for sale can be found online at: www.hgpauction.com and www.thebranfordgroup.com.


The global webcast auction is scheduled to begin at 10 am CT on April 4th, 2013.


Interested bidders are encouraged to attend the on-site preview April 3rd, between 9 am and 4 pm CT at 201 Research Boulevard on the campus of Mississippi State University in Starkville, Mississippi.


112 www.compoundsemiconductor.net March 2013


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