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September, 2022
Major Advance in Semiconductor Materials
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terial at room temperature. The work has important im-
plications for a range of electron- ic and optical applications, simi- lar to the advances that followed the advent of silicon wafers. Some semiconductor
applications require a mate- rial with both high thermal conductivity and high elec- tron and hole mobility. Ear- lier research had demon- strated that cubic boron ar- senide has high thermal conductivity, making the high ambipolar mobility a crucial advance.
“The potential of this
material is tremendous,” said Zhifeng Ren, M.D. Anderson chair professor of physics at UH. While work to consis- tently produce larger crystals with uniform properties is ongoing, the result could have an even bigger impact on the field than the silicon wafer. This is because semiconduc-
tors require that current be car- ried both through electrons and holes, but most known materials offer high mobility for only one type of carrier. The overall effi- ciency of the semiconductor is de- termined by the lower value. “If both are high, the device
will be more efficient,” said Ren. “That’s what makes this materi- al unique.”
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Carrier Mobility Ren was among a group of
researchers who reported in Sci- ence in 2018 that the crystal — grown from boron and arsenic, two relatively common mineral
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elements — demonstrated far higher thermal conductivity than traditional semiconductors. This work builds on that, using crystals grown in Ren’s lab to demonstrate the theoretical pre-
Boron arsenide single crystals.
dictions about the substance’s high mobility that can be shown experimentally. Carrier mobility is meas-
ured in units of cm2V–1s–1 and the researchers reported mobility at a value of 1,600. That portion of the work was led by Gang Chen, Carl Richard Soderberg profes- sor of power engineering at MIT, using an optical transient grat- ing method to measure both elec- trical mobility and thermal con- ductivity. Ren’s team reported a range
in values from about 1,500 to as high as 3,000 cm2V–1s–1. Measuring carrier mobility
was complicated by the fact that the crystal wasn’t large and uni- form, meaning that traditional measurement techniques, such Continued on page 8
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