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•Excellent linearity: 0.05% •Low input offset voltage and drift: 0.6 mV and 3µV/° C


•Low gain change vs. temperature: -50 ppm/°C •High bandwidth: 200 kHz typical, 140 kHz minimum


•3.3 V compatible outputs


•15 kV/µs common-mode transient immunity at Vcm =1500 V


•Fast response time: 1.6 µs •Advanced Sigma-Delta Analog-to-Digital converter and full differential isolation •Safety and regulatory approval (pending)


◦IEC/EN/DIN EN 60747-5-5: 1140 Vpeak working insulation voltage ◦UL 1577: 5000 Vrms/1 minute double protection rating ◦CSA: Component Acceptance Notice #5


•0.5 mm internal package distance-through- insulation (DTI)


•8 mm minimum package creepage and clearance


•Wide supply voltage: 3 V to 5.5 V •Compact 8-pin stretched SO-8 package: 30% smaller than DIP-8 package


•Extended temperature operation: -40° C to 105° C


Packaging and Temperature Range


The ACPL-C79x isolation amplifiers are available in a compact 8-pin stretched SO-8 package for automatic SMT assembly and are RoHS compliant. All devices operate over a very wide temperature range, -40 ° C to +105° C.


In order to achieve high insulation ratings, package creepage and clearance is 8 mm and distance-through-isolation, DTI, is 0.5 mm.


U.S. Pricing and Availability


Avago’s ACPL-C79B, ACPL-C79A and ACPL-C790 are priced at $6.25, $5.00 and $3.75 respectively, each in 10,000 piece quantities.


More information about Avago’s isolation amplifier and isolation products can be found at www.avagotech.com/optocouplers.


2nd generation SiC (Silicon Carbide) Schottky announced by Infineon Technologies


Infineon Makes 2nd Generation of its ThinQ! Silicon Carbide Schottky Diodes Available in Fully Isolated TO-220 FullPAK Package


Infineon Technologies have announced the availability of its 2nd generation SiC (Silicon Carbide) Schottky diodes in the TO-220 FullPAK package. The new TO220 FullPak portfolio combines the high electrical performance standards of the 2nd generation ThinQ!™ SiC Schottky diodes with the advantages of a fully isolated package, including easier and more reliable mounting without having to use isolating bushing and foil.


Uniquely, the new TO220 FullPAK devices show a similar junction-to-heatsink thermal resistance as the standard non-isolated TO- 220 devices. This is accomplished by using patented diffusion soldering technique from Infineon, which strongly reduces the “chip-to- leadframe” thermal resistance and effectively compensates for the FullPAK´s internal isolation layer. Infineon offers the 600V FullPAK portfolio in current ratings from 2A to 6A, making it the industry´s broadest portfolio of SiC diodes in this package type.


Silicon Carbide (SiC) is a revolutionary material for power semiconductors, with physical properties that far outperform Si power devices. Key features are a benchmark switching behavior, no reverse recovery, virtually no temperature influence on the switching behavior and a standard operating temperature of -55°C to 175°C. Main application areas for SiC Schottky diodes are active Power Factor Correction (PFC) in Switched Mode Power


June www.compoundsemiconductor.net 95


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