news Integra unveils first 50 volt GaN HEMT
GALLIUM NITRIDE-ON-SILICON technology development effort is a direct result of customer requests for smaller, more efficient power devices with broadband performance.
California based firm Integra Technologies has revealed its latest development in High Voltage Gallium Nitride on Silicon (GaN-on- silicon) technology. After nearly two years of research and development at it’s wafer fabrication facility, the company has launched two new products: the IGN2731M25 and IGN2731M50. Integra claims it has developed the first high
voltage GaN-on-silicon HEMT process with drain-source breakdowns exceeding 200V. High breakdown voltages enable devices to operate at higher voltages than seen in today’s marketplace which translates into higher performance.
“This just demonstrates Integra management’s commitment to providing superior technology and world class devices to our customers. Integra is excited by this new technology that allows us to penetrate new markets involving CW applications such as Electronics Warfare (EW) for the defence industry,” said
John Titizian, Integra’s founder and president.
“We have years of RF expertise manufacturing high power semiconductors and with our low overhead cost structure we will continue to dominate in both price and performance. Integra further solidifies its leadership position in high power pulsed RF transistors in the S-band radar market with these two new products,” added Jeff Burger, VP of Engineering and original founding member. “We continue to provide superior technology and excellent support to customers in our target market.”
Skyworks keeps it quiet with latest amplifiers
NEXT-GENERATION Ultra Low-Noise Amplifiers (LNAs) will meet demanding noise and linearity requirements for multiple wireless infrastructure applications.
Skyworks has introduced two low noise amplifiers (LNAs) for multiple cellular infrastructure receiver applications including GSM, CDMA, WCDMA and LTE base stations and repeaters. The new monolithic microwave integrated circuit (MMIC) amplifiers allow infrastructure providers to meet a wide range of performance requirements with a single device that minimizes system noise figures with
improved receiver sensitivity and stability. “Skyworks is pleased to be expanding our infrastructure product portfolio particularly as estimates for mobile data traffic are expected to double every year through 2014,” said David Stasey, VP of ‘Analog Components’ at Skyworks. “These solutions are just one of several devices that help reduce the size and complexity of networking equipment while enabling greater reliability, capacity and efficiency”, he added.
The SKY67100-396LF (1.7 - 2.0 GHz) and the SKY67101-396LF (0.7 - 1.0 GHz) are
gallium arsenide (GaAs) enhancement mode pseudomorphic high electron mobility transistor (pHEMT) LNAs designed for low noise figure down to 0.49 dB while providing unconditional stability and high- linearity performance up to OIP3 of 34 dBm.
The addition of an internal active bias circuitry provides stable performance over temperature. These new LNAs are available in a small, low-cost, industry-standard 2 x 2 x 0.75 millimeter (mm), 8 pin, dual flat no- lead (DFN) package and are layout compatible with each using a reduced - component matching network.
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www.compoundsemiconductor.net 7
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