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extended industrial temperature range of -40 degrees C to 125 degrees C. The LMH6629 is priced at $1.88 each in 1,000-unit quantities.
Plasma-Therm Wafer Processing Equipment THE BEST
VLSIresearch has announced that the global supplier of plasma process equipment, has been awarded by equipment users as one of THE BEST 2010 Small Suppliers of Wafer Processing Equipment.
VLSIresearch provides market research and economic analysis on the technical, business, and economic aspects within nanotechnology and related industries.
The extensive Customer Satisfaction Survey, which lasted approximately two months, reached chip making equipment users across the globe to rate their equipment suppliers in fields including product performance, process support, cost of ownership and uptime. Plasma- Therm was rated highest in technical leadership and commitment by its equipment users.
“We are honored to be voted in the top three of THE BEST Small Suppliers of Wafer Processing Equipment. The Customer Satisfaction Survey that is used to determine the THE BEST goes directly to our customers and provides us with first-hand feedback of their satisfaction level with our systems. THE BEST award is tangible proof that our direct attention on focused customer support and top line customer service is paying off,” said Abdul Lateef, CEO of Plasma-Therm.
This year’s award marks the 12th in a row of being one of THE BEST equipment suppliers for Plasma-Therm. Plasma-Therm, Inc. was voted one of THE BEST in 1998 and 2000, and then from 2001 – 2009 under the Unaxis and Oerlikon brand.
“The Customer Satisfaction Survey has been
measuring the industry’s opinion of chip making equipment quality and service for 22 years. Being voted one of THE BEST in the industry, Plasma-Therm has set its standards for exceeding customer satisfaction remarkably high early on in its reemergence as an independent company,” said Risto Puhakka, President of VLSIresearch.
Plasma-Therm, founded in 1974, is a supplier of advanced plasma process equipment that caters to various specialty markets including compound semiconductor suppliers and offers dry etch & PECVD technologies.
Kyma reveals low cost nitride on silicon solutions
The new AlN and GaN based epi-ready products are ideal for epitaxial growth of additional GaN and GaN-based device layers for applications such as LEDs, FETs, and Schottky diodes.
Kyma Technologies announced the launch of two new nitride template product lines. The two product lines consist of AlN and GaN on a silicon substrate and are claimed to be crack- free and have low bow. The AlN solution consist of a thin (up to 200nm) layer of crystalline AlN deposited on a Si (111) substrate. Diameters of 2”, 3”, and 4” wafers are currently available. The highly-oriented sub-grain structure and smoothness (less than 1nm RMS) of the crystalline AlN layer is claimed to provide an excellent epi-ready nucleation surface for customers to deposit GaN-based device layers.
Kyma’s GaN product is a thin, smooth (less than 1nm RMS) layer of GaN deposited on top of a Kyma AlN on (111) Si template. The GaN on Si template products currently offered have a 500 nm GaN layer and 2”, 3”, and 4” diameters.
The combination of low cost silicon substrates and low-cost high-performance deposition processes are excellent starting ingredients
June
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