news digest ♦ compound semiconductor ♦ product news
industrial PAR38 lamps becoming available in May in both warm white and cool white, each with two brightness levels. These will be followed by PAR30 lamps this summer. These lamps will provide businesses with a solution to retrofit existing sockets with lighting that has the ability to reduce the power consumption by approximately 80% compared to conventional halogen lamps.
Sharp’s U.S. LED lighting product lineup will be expanding rapidly to include indoor and outdoor fixtures for businesses and consumers. In the fall, Sharp will introduce A19 lamps as well as solar-powered walkway lighting and dimmable/ color changing remote-controlled LED lamps.
Sharp’s LED lamps are claimed to offer a high luminous flux and a high CRI (color rendering index) to enable more accurate reproduction of color and come with a 3-year warranty.
RFMD reveals new complete front-end solution
New RF5755 FEM is a compact highly integrated solution for handset/handheld WiFi 802.11b/g/n and Bluetooth systems.
New York city based firm RFMD unveiled the RF5755 FEM which integrates a 2.5GHz Power Amplifier (PA), multi-throw switch (SP3T), Low Noise Amplifier (LNA) and power detector coupler. The RF5755 also features integrated matching circuitry with output harmonic attenuation, reducing the bill of materials (BOM) and manufacturing costs. The RF5755 is packaged in a small 16-pin QFN package (3mm x 3mm x 0.5mm) and delivers the following features and customer benefits:
· high linear output power (20dBm) allowing higher efficiency and lower EVM for 11n applications · the ability to switch between WiFi transmit, WiFi receive, or Bluetooth (transmit or receive) · reduced need for a high loss/attenuation filter
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www.compoundsemiconductor.net June 2010
at the FEM output · high IIP3 and gain · simultaneous receive of WiFi and Bluetooth with positive gain in both paths (utilizing the SPST switch after the LNA) · a direct-to-battery connection eliminating the need for additional DC circuitry. · the integrated power detector coupler decreases sensitivity to voltage supply, temperature, and VSWR and improves the accuracy of the closed loop power control.
The RF5755 FEM is fully tested, including EVM and all DC parameters, providing a reduced size, single-placement solution that minimizes system footprint, reduces costs, and accelerates time-to-market for high linear output power applications.
GCS announces new THz diode process for mm-wave applications
Based on the planar Schottky diode, the monolithic process has MIM capacitor, spiral inductor, thin film resistor and backside via features and is now offered as a standard foundry process.
California based III-V compound semiconductor wafer foundry Global Communication Semiconductors (GCS) says that its proprietary Terahertz diode MMIC foundry process can now address millimeter-wave transceiver requirements. “Up until now, THz diode has only been available as a discrete device. The integration of a discrete THz diode into a circuit assembly with other active and passive components required wire bonding. Although this approach was not desired, it was unavoidable for many millimeter-wave applications due to the lack of a monolithic solution,” commented Jerry Curtis, CEO of GCS. “The THz diode process has been demonstrated as a mixer in a W-Band up- converter with a conversion loss of 6 dB, with a LO frequency of 91.8GHz (12 dBm) and an IF of 2.25 GHz. The process is ideal for applications in mm-wave frequency
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