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this power transistor because of its advantages in energy efficiency, reliability, and cost relative to other SiC technologies.


SiC technology enables energy efficient operation of power conversion and power management in telecom power supplies, inverters in solar and high-frequency welding, future automotive electric vehicle platforms, and many other products. Power supplies and power inverters based on this SiC technology are up to 50-75% more energy efficient than their traditional Si based competitors.


Dan Schwob, SemiSouth’s VP of Sales & Marketing remarked, “This new 1700 V, normally-off JFET offers the designer additional advantages compared to Si, including higher input voltages, better efficiency, including a significant double-digit efficiency improvement at high input voltages,”


The auxiliary SMP market is reported to have shown great early enthusiasm for this product.


The second product, the SJDP120R085, exhibiting RDSON of 85 m-Ohm, is a normally- on version of the popular, 1200 V, normally- off SiC JFET. According to Dr. Jeff Casady, CTO & VP of Business Development, “Some customers have asked for a normally-on version of our normally-off SiC JFET products due to their topologies. This normally-on version is identical to the normally-off version; except that it has 15% lower RDSON, 2 x higher saturation current, and requires no gate current in the conduction mode.”


Both products releases are available immediately in bare die form or TO-247 packages, and the full specifications are available on the website http://www.semisouth. com/products/products.html .


Since releasing the SiC FET in late 2008, SemiSouth has seen widespread adoption of


They also operate at up to four to eight times higher frequency, and as a result run cooler and be physically much smaller in size. For example, SiC power JFETs are expected to increase the ‘fuel’ efficiency of hybrid electric vehicles and help make them more affordable.


Osram latest Dragon 850nm LED 3.5x more radiant


New IR LED SFH 4236 has integrated lens, a very small form factor and adds depth


The infra-red LED which emits at a wavelength of 850 nm is claimed to be the best compromise between suppressed visibility for the human eye and maximum spectral sensitivity for CCD and CMOS cameras.


The latest device is best suited to applications with limited board space that require narrow radiation characteristics such as camera-based vision systems for the industrial and security markets It can also be employed in passenger monitoring systems for vehicles and blind spot detection systems in the automotive industry.


The integrated lens concentrates the emitted infrared light within a viewing angle of +/- 20° typically achieving an intensity of 650 mW/ sr at a DC current of 1 A. The SFH 4236 is claimed to be unique in that it does not require a complex, expensive external lens assembly to obtain a narrow beam angle.


June www.compoundsemiconductor.net 93


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