CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY Volume 16 Number 4


contents industry & technology


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news


06 07 08 10


AkzoNobel go global with increased Trimethyl Gallium capacity


Integra unveils first 50 volt GaN HEMT


RFMD goes back to base with latest amplifiers


Aixtron to supply LDX with two CRIUS tools


11 13 June 2010 www.compoundsemiconductor.net 5


11 13 14


MediaTek awards Skyworks for Compact Handsets


Oclaro has announced a $7.5 million investment in ClariPhy


Northrop InP HEMT Raises the Frequency Bar


06 10


III-Vs propel technology services GaAs and GaN technologies can spur high-quality delivery of advanced video, data and telephony services to the home, says TriQuint’s, Chris Day.


CS stocks soar Strong sales of LED backlit screens and mobile devices have led to substantial gains in the share prices of many III-V chipmakers over the last year.


A quarter century roller coaster Anadigics has packed an awful lot into its first 25 years. Compound Semiconductor’s Richard Stevenson tells the company’s story.


From lab to fab Silicon offers a low-cost platform for making nitride LEDs, but realizing high-quality epitaxy is tough due to the stress between the two materials. However, it is possible to produce the crack-free, low-defect-density films demanded by high-power LEDs by turning to a patterned substrate and a multi-layer buffer.


Lamps boost DUV The output power of DUV LEDs needs to rise if these devices are to be employed for water and air purification and polymer curing. One way to realise this is lamps that offer a larger emission area.


Electroluminescence exposes phase separation Scientists at West Virginia University have obtained experimental evidence of phase separation in AlInGaN layers with a few percent aluminum and indium.


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