news digest ♦ compound semiconductor ♦ product news Integra unveils first 50 volt GaN HEMT


This Gallium Nitride-on-silicon technology development effort is a direct result of customer requests for smaller, more efficient power devices with broadband performance.


California based firm Integra Technologies has revealed its latest development in High Voltage Gallium Nitride on Silicon (GaN-on-silicon) technology. After nearly two years of research and development at it’s wafer fabrication facility, the company has launched two new products: the IGN2731M25 and IGN2731M50.


Integra claims it has developed the first high voltage GaN-on-silicon HEMT process with drain-source breakdowns exceeding 200V. High breakdown voltages enable devices to operate at higher voltages than seen in today’s marketplace which translates into higher performance.


“This just demonstrates Integra management’s commitment to providing superior technology and world class devices to our customers. Integra is excited by this new technology that allows us to penetrate new markets involving CW applications such as Electronics Warfare (EW) for the defense industry,” said John Titizian, Integra’s founder and president.


“We have years of RF expertise manufacturing high power semiconductors and with our low overhead cost structure we will continue to dominate in both price and performance.”


“Integra further solidifies its leadership position in high power pulsed RF transistors in the S-band radar market with these two new products,” added Jeff Burger, VP of Engineering and original founding member. “We continue to provide superior technology and excellent support to customers in our target market.”


Both products operate over the instantaneous bandwidth covering 2.7 GHz to 3.1 GHz in the S-band frequency range. With breakdown


76 www.compoundsemiconductor.net June 2010


voltages approaching 200V both devices are characterized at 50V operating voltage providing 50 % efficiency. Under these conditions, the PN IGN2731M25 provides over 13dB of gain while the PN IGN2731M50 provides over 12dB of gain.


Under 300µs (microsec) pulse width and 10% duty cycle pulsing conditions, the PN IGN2731M25 typically supplies a minimum of 25W of peak output power, while the PN IGN2731M50 typically supplies a minimum of 50W of peak output power.


Both products are single ended devices housed in a ceramic flanged package and are claimed to provide excellent thermal advantages.


The IGN2731M25 and IGN2731M50 are available immediately for sampling. Pricing and delivery details are available by emailing sales@integratech.com .


Skyworks ups the stakes with new WiFi Amps


Firm introduces Mid- and High-Power WiFi Power Amplifiers Suited for 802.11n Access Points, Routers and Gateways.


Skyworks has introduced its new mid- and high-power (2.4 - 2.5 GHz) power amplifiers (PAs).


These products will enable multiple-transmit channels on printed circuit boards (PCBs), offering customers valuable configuration space savings. The mid-power PA offers two operating points in a single-device, providing maximum customer flexibility when developing platforms that meet varying performance requirements.


“Skyworks’ new and innovative WiFi power amplifiers complement our leadership portfolio of wireless semiconductors,” remarked Liam K. Griffin, Senior VP of Sales and Marketing at Skyworks.


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