news digest ♦ compound semiconductor ♦ industry news
“Much depends on the success of new entrants targeting applications in power management,” stated Mr. Anwar. “After the initial launch of these products in the opening quarter of 2010, we expect a number of major suppliers to enter the market over the next two years, prior to significant RF deployments in wireless infrastructure from 2012 onwards.”
The “GaN Microelectronics Market Update 2009-2014” report, details the increasing impact that GaN semiconductors will have on power management applications. The complementary report, “GaN Device and Material Vendor Summary,” reveals the strategies of companies supplying GaN-based products for military and commercial applications.
Both reports are available for download at
http://tinyurl.com/sa00868.
Steve Entwistle, VP of the Strategy Analytics Strategic Technologies Practice, remarked, “GaN has already cemented its place in the optoelectronics market, and is now emerging as a key enabling technology for the commercial microelectronics sector.”
Industry’s first commercially available Z-Rec(TM) 1700-V Junction Barrier Schottky (JBS) diode products
Cree, Inc., a market leader in silicon carbide power devices, announces the industry’s first commercially available Z-Rec(TM) 1700-V Junction Barrier Schottky (JBS) diode products
Leveraging silicon carbide’s unique advantages over silicon to virtually eliminate diode switching losses, these diodes are targeted at high-voltage power-conversion applications in motor-drive, wind-energy and traction systems.
Initial products in the 1700-V series include 10-A and 25-A JBS diodes in die form, ready for integration into 1700-V power modules ranging from 50 to 600-A. The new 1700-V JBS series can increase the efficiency, reliability and
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www.compoundsemiconductor.net June 2010
longevity of power systems while also reducing the overall system size, weight and cost.
“The 1700-V diodes extend our leadership in energy-efficient power systems for data-center and solar-power markets to new markets such as wind-energy, train, tram and electric-vehicle power converters,” said Cengiz Balkas, Cree, vice president and general manager, Power and RF. “Cree has the diodes of choice when high-efficiency power systems are a must. The advantages of silicon carbide are clear, and for high-voltage, high-frequency systems, you can’t afford not to use SiC.”
“ABB has been closely involved with the development of SiC technology for many years,” said Francisco Canales, senior principal scientist, ABB Corporate Research. “SiC diodes and switches provide an important step forward in technology that allows the increase of operation frequency, reduced size and weight while providing state-of-the-art efficiency in applications such as motor drives and solar inverters. The 1700-V devices now being launched by Cree are an important step in the development of this technology.”
For more information about Cree’s family of Z-Rec SiC diodes, including 600 V, 1200 V and the new 1700 V families, visit
www.cree.com/ power
Asia’s First LED Chip Production Plant OSRAM strengthens its position in LED arena
OSRAM Opto Semiconductors has held an opening ceremony for its 35,000 square meter new LED wafer fabrication plant in Penang, Malaysia. It is the company’s first ever LED chip plant in Asia and currently the most modern facility in the world. The plant will produce chips for light emitting diodes, the light source of the future. Y.B. Dato’ Sri Mustapa Mohamed, the Minister of International Trade and Industry of Malaysia, Y.A.B. Tuan Lim
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