industry news ♦ compound semiconductor ♦ news digest
range of photodetectors and optical sensors. Among the applications for the latter are manufacturing process monitoring and controls, homeland security surveillance and biomedical sensors for diagnostics and testing.
As consideration for the purchase of Vanguard, Natcore has agreed to issue Vanguard shareholders a total of 373,606 common shares, subject to the approval of the TSX Venture Exchange.
In conjunction with the acquisition of Vanguard, Natcore entered into an agreement with a firm performing services for Vanguard to pay legal fees incurred by Vanguard through the issuance of 120,075 common shares of Natcore and an agreement with a firm providing services to Natcore in relation to the Vanguard acquisition through the issuance of 20,000 common shares, all of which is subject to the approval of the TSX Venture Exchange.
NXP reveals 50 RF/Microwave products based on SiGe:C BiCMOS
NXP Semiconductors 50 new products will be rolled out by the end of 2010. NXP’s QUBiC4 SiGe:C process technology aims to provide cost-effective, integrated, high frequency using a silicon-based process. Their latest products are claimed to offer higher and more flexible performance than GaAs-based solutions and add more functionality onto devices with less space, competitive cost, reliability and manufacturing advantages.
The new technology is targeted towards high frequency radio applications in the wireless, broadband communications, networking, and multimedia markets and claimed to offer high power gain with an excellent dynamic range.
With more than a dozen silicon germanium based products in the market, NXP has developed and shipped more than 25 million RF products using its QUBiC4 technology
showing that the SiGe:C process can deliver the performance of GaAs technology.
“As a global leader in RF technology and component design, NXP is committed to the development of products produced with SiGe:C technology to address the fast-moving dynamics of the RF/microwave markets. We endeavor to provide cost-effective, integrated, high frequency solutions with the performance of gallium-arsenide (GaAs) technologies using a silicon-based process,” said Ronald van Cleef, GM of RF Small Signal Business, NXP Semiconductors.
QUBiC4 technology speeds the migration from GaAs technology to silicon by enabling cutting- edge, low-noise performance and IP availability. NXP offers three variants of the QUBiC4 technology. These include QUBiC4X, a 0.25µm SiGe:C process introduced about 6 years ago, typically used for applications up to 30GHz and very low noise applications such as GPS and the most recent 0.25µm QUBiC4Xi SiGe:C process. This offers on Ft in excess of 200GHz, which is particularly suited for applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar.
Applications for QUBiC4-based products ranges from mobile platforms, personal navigation devices, AESA radars, satellite DBS/-VSAT, e-metering, software-defined radios (SDR), base stations, point-to-point radio links, and WLAN, where high frequency and high integration levels are essential. End users can benefit from increased functionality on smaller and lighter weight mobile phones.
A dozen products are already available, including GPS Low Noise Amplifiers such as the BGU7005, Medium Power Amplifiers such as the BGA7124 and LO Generators such as the TFF1003HN.
Another 40 new products will be released in May and throughout the year, including new 6th and 7th generation wideband transistors, Low Noise Amplifiers, Medium Power Amplifiers,
June
www.compoundsemiconductor.net 55
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127