industry news ♦ compound semiconductor ♦ news digest year warranty.
Cree will also be reducing the price of its award-winning LR24 LED troffer by 15% to reduce upfront cost and accelerate the LED lighting revolution.
TriQuint wins “Company of the Year” award again
TechAmerica Oregon awards TriQuint for their System/Hardware for the second year running
TriQuint Semiconductor today announces it received the 2010 System/Hardware “Company of the Year” award from TechAmerica which is the largest and strongest voice and resource for technology in the United States.
The award recognizes TriQuint’s
accomplishments, leadership and commitment to the community and industry. TriQuint celebrates its 25th anniversary in 2010 providing connectivity solutions for the world’s leading communications, defense and aerospace companies.
Allen Alley, the Chairman of TechAmerica Oregon, commented “TriQuint has been a solid contributor to the technology community, and has persevered through 2009’s economic challenges. Guided by strong leadership and thoughtful risk taking, we applaud TriQuint for its accomplishments in the industry and contributions to the community.”
Ralph Quinsey, President and CEO of TriQuint, accepted the award on behalf of TriQuint. He said “In Q1 of 2009 we looked across the chasm and saw great opportunity. We maintained staffing levels, invested in the business and focused on the future. Our employees attended to customers, and we grew the business nearly 15%. And 2010 looks to be another great year.”
Mr. Quinsey was also recognized as TechAmerica Oregon’s 2009 Technology
Executive of the Year, and presented TripWire’s Jim B. Johnson with the 2010 Executive Award at Thursday’s celebratory event.
RFMD Announces Qualification of Second GaN2 Process Technology
New technology geared at CATV broadband transmission products and is optimized for higher linearity, higher gain and lower voltage operation.
RF Micro Devices announced the successful qualification of its second high-power Gallium Nitride (GaN) process technology. The second high-power GaN2 HEMT process technology achieves 1-2dB higher gain and 6dB greater linearity than RFMD’s first high-power GaN process technology (GaN1) at moderately lower power density.
RFMD’s first high-power GaN process technology (GaN1) was qualified in the June 2009 quarter and delivers much higher power density and voltage breakdown than competing technologies. It is ideally suited for high- performance devices such as power amplifiers for radar and communications.
RFMD’s GaN2 reliability measurements confirm a useful lifetime of over 17 million hours at a channel temperature of 200 deg C. This industry-leading reliability performance is especially noteworthy because GaN2 is an early stage process on RFMD’s GaN technology development roadmap. Additional technologies in development include MMIC process modules with complimentary Integrated Passive Component (IPC) technology.
Bob Van Buskirk, President of the Multi-Market Products Group (MPG), said, “RFMD’s high- performance GaN technology is consistently demonstrating industry-leading levels of reliability, allowing our customers to design GaN products that exceed their stringent system reliability specifications. RFMD’s GaN technology also enables advanced RF
June
www.compoundsemiconductor.net 59
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127