news digest ♦ compound semiconductor ♦ product news
characterization engineer in the late 1990s . “Jihye has a successful track record in finding new business opportunities for small start-up businesses as well as large corporations. We are very fortunate to have her on our team, especially as we continue to expand our business and reach into our global markets,” says Robert Donahue, Chief Strategy Officer. Most recently, Ms Whang served as Director of Corporate Development for SK Telecom Americas. Previously, she was Chief of Staff for Intel’s Service Provider Business Group that grew as a new business initiative for WiMAX. Ms. Whang holds an MBA from Stanford University and a B.S. and M. Eng. in Electrical Engineering and Computer Science from the Massachusetts Institute of Technology.
Infineon unveils Highest Power Density and Reliability IGT modules
Compact IGBT Modules PrimePACK 3 and flag-ship EconoDUAL 3 presented at PCIM, Europe.
Infineon Technologies presents the PrimePACK module, FF1400R17IP4 with 1400A in 1700V in a PrimePACK 3 packaging, and the EconoDUAL 3 module, FF600R12ME4, with 600A in 1200V.
“Introducing the two new modules in the proven PrimePACK and EconoDual families, Infineon once again underlines its technological leadership in offering IGBT modules with highest power density for energy-efficient, compact designs,” says Martin Hierholzer, VP and GM of Industrial Power at Infineon.
The FF1400R17IP4 significantly widens the power range of the PrimePACK family and is suited to applications including renewable energies, and powerful industrial drives. The new IGBT module addresses the rapidly growing requirements in the market for higher power within the same compact dimensions, paired with highest reliability. With dimensions of 89mm x 250mm, the FF1400R17IP4 has an
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www.compoundsemiconductor.net June 2010
intelligent, optimized chip layout and module design. This packaging results in an improved distribution and dissipation of heat, reduced thermal transfer resistance between base plate and heatsink, and minimal internal leakage inductance.
The FF600R12ME4 is ideal for use in applications such as frequency converters in automation drive systems, central inverters in photovoltaic systems. The optimized module design with regard to interconnection technology and thermal resistance, results in high current utilization and a consequently high efficiency. The power range may be increased by up to 30% compared to the other EconoDUAL modules but package dimensions remain the same.
In addition to the familiar soldered version of the control contacts, the highly reliable PressFIT contact technology has been introduced in the EconoDUAL 3 family. Samples of the IGBT module FF1400R17IP4 of the PrimePACK 3 family will be available from Q3 2010, while start of volume production is planned for the Q4f 2010. Samples of the EconoDUAL 3 module FF600R12ME4 are also available, with series production planned for September 2010.
SemiSouth Reveals latest SiC JET products
New 1700V and 1200 modules claimed to have superior resistance, output capacitance and gate charge characteristics compared to best Si MOSFETs
US firm SemiSouth announced two additions to its SiC JFET family. The first is a normally- off, 1700 V, SiC JFET targeted at the auxiliary power supply market for motor drives. The new SJEP170R550, a SiC JFET, is claimed to offer higher blocking voltage (1700 V) and have 5 x lower on-resistance (550 m-Ohm), and ~ 10 x lower output capacitance (COSS of 20 pF) and gate charge (QG of 10 nC) than the best Si MOSFETs.
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