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commissioned at the company’s facility in Ping- Jen City, Taoyuan, Taiwan during the second and third quarters of 2010.
“We have been using several AIX 2600 mass production MOCVD reactor systems for some years now. These have contributed greatly to our strong market share for optoelectronic and microwave epiwafers in Taiwan and worldwide, “Neil Chen, VP of VPEC commented. “ In fact this business has been so successful that we must bring on stream a major new additional capacity. Working with AIXTRON has always been straightforward and our technical staffs are assured of a seamless operation of the high efficiency precision systems in a year’s time.”
Since its set-up in 1996, VPEC (Visual Photonics Epitaxy Co) has used Aixtron MOCVD systems to produce high-volumes of HBT, PHEMT, BIHEMT and PIN (including Zn diffusion) customized epi-wafers.
GE mark 50th birthday of the LASER with new blog
GE scientists will blog about all laser technologies from inception to the future
GE Global Research scientists specializing in laser technology development at GE marked the 50th anniversary of the invention of the laser (16th May) with the launch of “Laser Diode-logues” - a new blog feature on the Research Lab’s technology blog, Edison’s Desk –
www.edisonsdesk.com . “Through Laser Diode-logues, we will celebrate the achievements of the past 50 years in laser technologies and talk about future innovations that GE and others are working on that will define the next 50 years. Through Laser Diode- logues, we will celebrate the achievements of the past 50 years in laser technologies and talk about future innovations that GE and others are working on that will define the next 50 years,” said Kevin Harding, Principal Scientist at GE Global Research and a fellow and past
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www.compoundsemiconductor.net June 2010
president of SPIE, the international society for optics and photonics.
Pictured is GE scientist Robert Hall at GE’s Research Labs in Niskayuna, NY with the semiconductor (diode) laser around the time it was invented in early 1960s. Photo courtesy of the Schenectady Museum. (Photo: Business Wire)
The first blog post highlights GE’s first big breakthrough in lasers, the invention of the semiconductor (diode) laser in 1962. Invented by GE scientist Robert Hall, the diode laser’s impact still looms large today helping to enable everything from the world wide web, TV remote controls and price code scanning in stores. Watch a video interview of Robert Hall providing his recollections of this major invention.
Harding added, “Today, we don’t think twice when surfing the internet, scanning cable channels with our TV remote, listening to a CD or moving more swiftly through the check-out line at the grocery store. All of these common, everyday conveniences were made possible, in large part, by GE’s invention of the diode laser.“
Robert Hall’s career as a physicist in GE’s R&D labs spanned more than 40 years. An area where he had significant impact was in semiconductor technologies, which GE continues to drive today in applications such as silicon carbide power devices and thin film solar cells. By the time he retired in 1987, he had received 43 patents and many prestigious
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