product news ♦ compound semiconductor ♦ news digest
Yangzhou Zhongke orders 2 more CRIUS reactors
The MOCVD systems will be used for high brightness LED production.
Aixtron has a new order for two CRIUS 31x2” configuration deposition systems from Yangzhou Zhongke Semiconductor Lighting Center Company based in China.
The firm placed the order in the fourth quarter of 2009 and after delivery in the second quarter of 2010 the machines will be used for GaN high brightness LED production for streetlight and display backlighting applications. The local Aixtron support team will commission the new reactors at the facility within the company’s research group, ISCAS, in China.
World first for Integra
New high-voltage GaN chips developed by Integra.
Integra Technologies has developed a new form of high-voltage gallium nitride (GaN)-on- silicon technology, it has been revealed.
The firm has launched two new products - IGN2731M25 and IGN2731M50 - that are the first devices capable of processing with drain- source breakdowns exceeding 200 volts.
As a result, the company has claimed these are the first GaN-on-silicon chips capable of achieving this and, as a result, deliver higher performance than other products that are presently on the market.
John Titizian, the company’s founder and president, said: “Integra is excited by this new technology that allows us to penetrate new markets involving CW applications such as electronics warfare for the defence industry.”
Integra was founded in February 1997 and June
www.compoundsemiconductor.net 75
According to the company, this means users will benefit from broadband access that is up to ten times quicker than traditional 3G systems.
Vice-president Brian Balut said the filtering technology is becoming increasingly important in the 4G WiMaX market.
He remarked: “The flexibility to access WiMAX networks with an existing 3G smartphone or WiFi laptop gives consumers 4G access while extending the lifetime of their existing mobile device.”
Mr Balut added that this is “transformational technology” for the industry, allowing maximum flexibility to users.
TriQuint describes itself as a leader in market diversity for the design, development and manufacture of high-end RF solutions with gallium arsenide and gallium nitride expertise.
operates in the high-power radio frequency semiconductor industry. Its product portfolio covers radar bands in the UHF/VHF, L-band, S-band and C-band for commercial, military and defence markets.
TriQuint announces new 4G filter technology
A new 4G filter technology has been launched by TriQuint Semiconductor.
TriQuint Semiconductor has launched a new range of highly-selective WiFi/WiMax RF bulk acoustic wave (BAW) 4G filters.
The manufacturer noted that the products allow mobile devices to act as portable wireless local area network hotspots, while simultaneously enabling connection to 4G WiMaX networks.
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