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news digest ♦ Telecoms


applications. The device provides high linearity, excellent gain, a high 1 dB input compression point and a superior noise figure. The integrated GPS and GNSS filter provides low in-band insertion loss and excellent out-of- band rejection performance for the cellular\LTE, personal communication service and wireless local area network frequency bands. The SKY65702-11 comes in an ultra-small 2.5 x 2.0 millimetre low cost package.


Texas Instruments expands its family of GaN FET driver ICs


The flexible low-side gate gallium nitride driver is suited for use with MOSFETs and GaN power field-effect transistors (FETs) in high- density power converters


The new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters.


Together with the LM5113, one of the industry’s first 100-V half-bridge GaN FET drivers, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data centres applications.


source outputs from a 5-V supply voltage. It features a high 7.6-A peak turn-off current capability needed in high-power applications where larger or paralleled FETs are used. The increased pull-down strength also enables it to drive GaN FETs properly. The independent source and sink outputs eliminate the need for a diode in the driver path and allows tight control of the rise and fall times.


TI is showcasing its FET driver family - the LM5114, the LM5113 in a new micro SMD package, the pin compatible 4-A/8-A UCC27511 low-side gate driver scheduled for release in March, and other products that help unlock the full benefits of GaN FET technology - in booth #401 at the Applied Power Electronics Conference and Expo (APEC) in Orlando, Florida, Feb. 6-8.


APEC is one of the industry’s leading conferences for practicing power electronics professionals.


The LM5114 is available in volume now from TI and its authorised distributors. Offered in a 6-pin SOT-23 package and 6-pin LLP package with exposed pad, the suggested retail price is $0.58 in 1,000-unit quantities.


Samples and an evaluation module of the new GaN FET can be ordered at www.ti.com/ lm5114-pr


New wideband control GaAs products spanning 100 MHz to 50 GHz


The recently released gallium arsenide based devices are ideal for automotive, microwave radio, test equipment, military and space applications up to 50 GHz


The LM5114 drives both standard MOSFETs and GaN FETs by using independent sink and


98 www.compoundsemiconductor.net January / February 2012


Hittite Microwave Corporation has introduced a new Single Pole Double Throw (SPDT) Switch and two new Serial Controlled 5-Bit Digital


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