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Defining the next step for the Compound Semiconductor Industry


It’s an incredibly intriguing time for our industry, which is mulling over many important questions. How is the GaAs architecture in mobile devices going to evolve to enhance connectivity? Is the growth of concentrating photovoltaics strong enough for it to grab a significant share of the solar market? When will LED lightbulbs start to generate significant revenues? Will nitride laser production switch to growth on semi-polar and non-polar substrates, and how can such materials be made? And can III-Vs help to maintain the march of Moore’s law beyond the 15 nm node?


Insights into all these important questions will be given at CS Europe 2012. Speakers at this two-day meeting include leading analysts in the compound semiconductor sector, representatives of the biggest GaAs foundries in the world, and leaders of the top LED and nitride laser manufacturers. On top of that, there is a session dedicated to the development of III-Vs on CMOS that includes speakers from Intel, SEMATCH and imec.


Don’t miss out on your chance to find out where the compound semiconductor community is heading over the next few years. Places are limited, so book today.


Conference Chair: Dr Andrew W Nelson, President and CEO, IQE


Markets and III-V CMOS - Morning 12th March Compound Semiconductor Markets: Current Status and Future Prospects - Asif Anwar, Director – Strategic Technologies Practice, Strategy Analytics The Market for LEDs in Lighting - Mr. Philip Smallwood, Analyst, IMS Research Wide Bandgap device market update - Dr. Philippe Roussel, Senior Project Manager, Yole Développement European efforts to develop III-Vs on 200 and 300mm silicon - Dr. Matty Caymax, Chief Scientist, Imec An Overview of the DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program - Sanjay Raman, Program Manager, Defense Advanced Research Projects Agency, DARPA/Microsystems Technology Office The Integration of silicon CMOS with III-Vs - Professor Iain Thayne, University of Glasgow III-V on 200 mm Si for VLSI – Dr. Richard Hill, Project Manager, Sematech III-V 3D Transistors - Peide Ye, Professor of Electrical and Computer Engineering, Purdue University


LEDs, lasers, PV and electronics - Afternoon of 12th & all day of 13th March Keynote Speaker: III-V on Silicon: Challenges and Opportunities - Robert S. Chau, Intel Senior Fellow, Intel SiC and GaN Electronics - Dr. John Palmour, Cree co-founder and chief technology officer Power & RF, Cree Ammono’s ammonothermal method to make GaN substrates - Dr. Robert Dwilinski, President, CEO, Ammonno S.A. Tomorrow’s RF chips for mobile devices - Todd Gillenwater, VP of Technology and Advanced Development, RFMD Building a Successful III-V Pure Play Foundry - Dr. John Atherton, Associate Vice President, WIN Semiconductors


Scalable “on-silicon” solutions (GaN-on-Si and Ge-on-Si) using rare oxide buffer layers – Dr. Michael Lebby, General Manager & Chief Technology Officer, Translucent Inc.


III-Nitride Lasers Based on Nonpolar/Semipolar Substrates - Dr James W. Raring, VP Laser Engineering, Soraa Inc. Markets and Applications for SiC Transistors - Dieter Liesabeths, Vice President Sales & Marketing, SemiSouth Laboratories, Inc. Perspective of an LED Manufacturer - Professor Iain Black, VP WW Manufacturing Engineering, Technology & Innovation, Philips Lumileds Lighting Company


The CPV Market following the acquisition of Quantasol technology - Jan-Gustav Werthen, JDSU, Senior Director Commercialisation of GaN on SI based Power Devices at International Rectifier - Dr. Michael A. Briere, International Rectifier GaN the enabler for true SDR - Professor Rik Jos, RF Technology Fellow & Innovation Manager, NXP Semiconductors Holistic Approach to MOCVD vacuum & Abatement - Dr. Mike Czerniak, Product Marketing Manager, Edwards Vacuum Ltd Advances in Wide Bandgap Semiconductors for Power Electronics - Dr. Markus Behet, Global market manager, Power Electronics, Dow Corning Large diameter GaN-on-Si epiwafers for power electronics - Dr. Marianne Germain, Co-Founder & CEO, EpiGaN Achieving GaN & GaAs RF Design Success through Product & Foundry Innovation - Bryan Bothwell, Strategy and Business Development Manager - Foundry Services, TriQuint Semiconductor Damage free Deposition on LED devices - Dr. Silvia Schwyn Thöny, Senior Process Engineer, Evatec Ltd Temporary Bonding: An enabling technology for RF and power compound semiconductor devices - Dr. Thomas Uhrmann, Business Development Manager, EV Group (EVG)


There will be a networking dinner and the CS Industry Awards 2012 on the evening of March 12th.


Register NOW at www.cseurope.net


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