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Power Electronics ♦ news digest


as the eighth vice chairman of the Joint Chiefs of Staff, the nation’s second-highest military officer. He retired from the United States Marine Corps in August 2011 and currently is the Harold Brown Chair in Defence Policy Studies at the Center for Strategic and International Studies


“General Cartwright’s deep understanding of defense and broad experience in military operations and matters of national security will be of great value to our Board,” said Raytheon Chairman and CEO William H. Swanson.


Prior to serving as vice chair of the Joint Chiefs, Cartwright was commander, U.S. Strategic Command, from 2004 to 2007. He served as director for Force Structure, Resources and Assessment, J-8, Joint Staff (2002-2004); as Commanding General, 1st Marine Aircraft Wing (2000-2002); and in a number of other positions including operational assignments as a naval flight officer and naval aviator who flew the F-4 Phantom, OA-4 Skyhawk and F/A-18 Hornet.


Cartwright attended the University of Iowa and was commissioned a second lieutenant in the U.S. Marines in 1971. He graduated with distinction from the Air Command and Staff College, received an M.A. in national security and strategic studies from the Naval War College, completed a fellowship with the Massachusetts Institute of Technology, and was honoured with a Naval War College Distinguished Leadership Award.


Low-profile SiC MOSFET modules with multiple circuit topologies


Powerex is introducing two new split dual silicon carbide devices which are designed for use in high frequency applications power systems. They are ideal for use in fans, pumps ,UPS, high speed motor drives as well as electric vehicle and aviation systems


Rated at 100A/1200V, the SiC modules have a junction temperature of - 175°C and low internal inductance. Featuring high speed switching and a high power density, Powerex says they have industry leading RDS(on).


With 2 individual switches per module, the devices also demonstrate low switching losses, low capacitance and require a low drive. They also have a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter.


The QJD1210010 has an isolated copper baseplate . For extended thermal cycle life, the QJD1210011 has an isolated AlSiC baseplate.


These MOSFET modules can be used in various high frequency applications, including energy saving power systems, such as fans, pumps and consumer appliances. They are also suited to high frequency type power systems, such as UPS, high speed motor


January / February 2012 www.compoundsemiconductor.net 199


Each QJD1210010 and QJD1210011 module consists of two MOSFET SiC transistors, with each transistor having a reverse-connected Cree Zero Recovery free-wheel SiC Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.


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