news digest ♦ Power Electronics drives, induction heating, welding and robotics.
The power systems can withstand high temperatures and as such, can be used in electric vehicle and aviation systems.
Renesas releases more low loss SiC power devices
The modules incorporate multiple silicon carbide diodes and multiple power transistors in a single package to compose a power converter circuit or switching circuit
Renesas Electronics has announced the availability of three new SiC compound power devices, the RJQ6020DPM, the RJQ6021DPM and the RJQ6022DPM.
These are the second series of power semiconductor products from Renesas to employ SiC, a new material effective in reducing loss, and they are intended for use in home appliances such as air conditioners, PC servers, and power electronics products such as solar power generation systems.
Recently, efforts to reduce the power consumption of electric devices have progressed to address considerations such as environmental protection, and demand has increased for higher efficiency in a variety of electrical products.
In particular, a strong trend can be seen toward boosting power conversion efficiency and operating efficiency to reduce power consumption in power switching circuits for products such as air conditioners, communication base stations, PC servers, and solar power generation systems, and in inverter circuits for applications such as motors and industrial equipment.
This has spurred demand for power devices with improved efficiency and lower loss characteristics. Renesas responded by
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www.compoundsemiconductor.net January / February 2012
introducing SiC Schottky barrier diode (SiC- SBD) products employing SiC to achieve reduced loss. This is now followed by a series of SiC compound power devices that implement a circuit (switching, power conversion, etc.) in a single package by combining an SiC-SBD and high-power MOSFETs or IGBTs.
The new products have a voltage tolerance of 600 V and use an SiC diode based on low- leakage SiC-SBD technology developed jointly by Hitachi, Ltd., and Renesas. They combine low loss and compactness and are available in a fully molded TO-3P package with a 5-pin configuration and pin assignments optimized for specific applications, making it easy to configure a circuit unit incorporating them.
The RJQ6020DPM device for critical- conduction mode PFC applications The RJQ6020DPM device combines in a single package an SiC-SBD and two high-voltage power MOSFETs required in switching circuits for critical-conduction mode PFC in the power supplies of products such as air conditioners or flat-panel TVs. The reverse recovery time (trr) of the SiC-SBD is only 15 nanoseconds (ns), and the high-voltage power MOSFETs are highly efficient super-junction (SJ- MOS) transistors employing a deep-trench configuration to achieve a low on-resistance of 100 m
Soitec and Sumitomo Electric jointly develop engineered GaN substrates
The 4- and 6-inch gallium nitride substrates are suited for manufacturing advanced high- brightness LEDs and power-efficient controllers for the electric vehicles and energy markets
Soitec and Sumitomo Electric Industries have reached a major milestone in their strategic joint development program started in December 2010.
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