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news digest ♦ Lasers


Dr. Philippe Roussel to present at CS Europe Conference 2012


Defining the next steps for the Compound Semiconductor Industry,Dr. Philippe Roussel of Yole Développement will present the talk “Wide Bandgap device market update”.


Following the success of CS Europe 2011, next year’s conference is expanding to 2 days and offers a fantastic mix/quality of speakers making it the must attend industry event for 2012.


Register at www.cseurope.net & book your delegate place now as numbers will be limited. The conference takes place on 12th/13th March 2012 at Hilton Hotel, Frankfurt, Germany.


A networking dinner will also be held on the night of 12th March.


Conference Chair Dr Andrew W Nelson, President & CEO, IQE Conference Schedule:


Markets and III-V CMOS - Morning 12th March


A mix of insightful market research presentations & cutting-edge research destined to shape tomorrow’s compound semiconductor industry with talks including:


Compound Semiconductor Markets: Current Status and Future Prospects - Asif Anwar, Director – Strategic Technologies Practice, Strategy Analytics


The Market for LEDs in Lighting- Mr. Philip Smallwood, Lighting Market Analyst, IMS Research


Wide Bandgap device marketupdate - Dr. 154 www.compoundsemiconductor.net January / February 2012


Philippe ROUSSEL, Senior Project Manager, Yole Développement


European efforts to develop III-Vs on 200 and 300 mm silicon- Dr. Matty Caymax, Chief Scientist, Imec


An Overview of the DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program- Sanjay Raman, Program Manager, Defense Advanced Research Projects Agency/Microsystems Technology Office


The Integration of silicon CMOS with III-Vs- Professor Iain Thayne, University of Glasgow


III-Vs on 200 mm Si for VLSI– Dr Richard Hill, Project Manager, Sematech


III-V 3D Transistors- Peide Ye, Professor of Electrical and Computer Engineering, Purdue University


LEDs, lasers, PV and electronics - Afternoon of 12th March & full day of 13th March


KEYNOTE SPEAKER: III-V on Silicon: Challenges and Opportunities- Robert S. Chau, Intel Senior Fellow, Intel


SiC and GaN Electronics- Dr. John Palmour, Cree co-founder and chief technology officer Power & RF, Cree


Ammono’s ammonothermal method to make GaN substrates– Dr. Robert Dwiliński, President, CEO, Ammonno S.A.


Tomorrow’s RF chips for mobile devices- Todd Gillenwater, VP of Technology and Advanced Development, RFMD


Building a Successful III-V Pure Play Foundry- Dr. John Atherton, Associate Vice President, WIN Semiconductors


Scalable “on-silicon” solutions (GaN-on- Si and Ge-on-Si) using rare oxide buffer


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