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news digest ♦ Power Electronics


and the growth of the SiC single crystal is achieved by having vapour sublimated from the SiC material in powder form to recrystallise on top of seed crystals.


In 2007, using its own sublimation- recrystallisation method established through long years of R&D efforts, the firm developed and established a mass production technique for manufacturing high-quality 4-inch SiC wafers, which Nippon Steel Materials started selling in 2009.


In the sublimation-recrystallisation method, the growth of crystals of compounds at ultra-high temperatures makes process control difficult. The major problem is that with an increase in the size of crystal diameters, there is an increasing tendency for crystals to become susceptible to cracking induced by crystal defects and thermal stress.


By accelerating R&D efforts to resolve these problems, and based on numerical simulation technology, Nippon Steel developed a process using ultra-high-temperature equipment and operating conditions suitable for 6-inch diameter wafers. The process successfully restrained crystal defects and crystal cracks in the growth of large-diameter crystals, and the firm manufactured what it claims is Japan’s first 6-inch SiC aperture wafer.


Part of this R&D program was subsidised under the “Novel Semiconductor Power Electronics Project Realising Low Carbon Emission Society” of the New Energy and Industrial Technology Development Organization (NEDO).


Nippon Steel says that in order to establish its 6-inch wafer manufacturing technology, it will continue efforts to achieve further product stability and productivity. The firm will also pursue the development of 6-inch SiC epitaxial film manufacturing.


EPC’s eGaN FET is a leading product


The firm’s enhancement mode gallium nitride (eGaN) transistor is being adopted by customers as higher performance replacements for silicon-based MOSFETs


Efficient Power Conversion Corporation (EPC) has been honoured with a “Leading Product Award” by EDN China Innovation Award 2011 in its Power Device and Module category.


In its seventh year, the EDN China Innovation Award 2011 is a benchmark event for recognising product innovation by China’s electronics design engineers and managers.


“It is an honour to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” commented Alex Lidow, CEO of EPC.


EPC2010


EPC2010 is EPC’s second-generation 200 Volt enhancement mode gallium nitride (eGaN) power transistor with high frequency switching, enhanced performance in a lead-free, RoHS package.


The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. It has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.


210 www.compoundsemiconductor.net January / February 2012


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