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news digest ♦ Lasers


QD Laser developed 1064 nm high-power single-mode lasers optimized for wavelength conversion in collaboration with Fujitsu Laboratories and the University of Tokyo. This development was based on the collective core proprietary technologies of semiconductor crystal growth, precise grating fabrication, and device design technology.


Figure 1: Prototype module appearance (a dime is also shown for size reference)


An evaluation of the prototype module confirmed green light output of greater than 100 mW under CW (Continuous wave) conditions and high-speed modulation of more than 100 MHz. This module shows promise for a wide range of applications such as with florescence microscopes or spectral analysis in life science or biomedical applications, and precise measurements as well as nondestructive inspections in industry.


What’s more, it is also expected to apply to future ultra-compact projectors in consumer electronics. QD Laser is planning to start sample shipments of the new product, QLD0593-P50, with > 50 mW output power from the 2nd quarter of 2012 and to start mass- production from the 4th quarter.


Recently, high-power green lasers have been garnering much attention in many fields, including life sciences and with biomedical and industrial applications. Different from near- infrared lasers for optical communications and red and blue lasers for optical storage, semiconductor lasers provide limited output characteristics in the case of green lasers.


Therefore, diode pumped solid state (DPSS) lasers are usually used in applications which require high output power at wavelengths around 530 nm. In these applications, it is imperative to have improved wavelength stability and high-speed modulation capability as well as low power consumption and compact size.


148 www.compoundsemiconductor.net January / February 2012


Figure 2: Light output characteristics (DFB current = 100 mA)


According to the test results of the prototype module, 100 mW output power was obtained with power dissipation of about 900 mW, which means high wall-plug efficiency of more than 10%. For the optical spectral characteristics, narrow line-width of less than 0.01 nm with a high side-mode suppression ratio was obtained, which is particularly suitable for precise measurements using an optical interference or high resolution spectroscopy.


In addition, confirmation was made of a high-


What’s more, the newly developed module assembling technology enables precise integration of the laser chip and wavelength conversion crystal. As a result, a high output power of more than 100 mW at a wavelength of 532 nm from an ultra-compact package of just 0.5 cc was achieved.


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