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news digest ♦ Equipment and Materials


Dipanjan Deb, managing partner of Francisco Partners, added, “The investment in Ichor Systems represents the latest in a series of semiconductor investments we have made over the years and reflects our continued commitment to investing in the semiconductor and capital equipment industries. We plan to build upon Ichor Systems’ successes and will provide the resources needed to expand the company’s market leadership.”


David Shimmon, chief executive officer of Ichor Systems said, “American Industrial Partners had both a unique insight into the semi industry at its 2009 trough and the deep technical skills to successfully work with management to execute numerous operational enhancements. During management’s partnership with American Industrial Partners, Ichor has diversified into entirely new product markets and developed industry leading operational capabilities in Asia. The Ichor team greatly values American Industrial Partners’ contribution to the success of the company and, with this chapter in our development now concluded, we look forward to continued growth.”


He added, “In Francisco Partners, we have found the truly unique partner who brings historical investment experience in our specific market, a rich network, and strong expertise in the semiconductor, LED, and technology markets broadly,” said. “We look forward to leveraging Francisco Partners’ insights and capabilities as we support and grow with our customers.”


Nocilis Materials launches new SiGe foundry


The spin-out from the Royal Institute of Technology, KTH, Sweden is to provide services for Silicon-based materials (including Silicon Germanium) for customers all over the world


With niches in the IR & THz uncooled detector 224 www.compoundsemiconductor.net January / February 2012


markets, Nocilis produces thermoelectric structures based on group IV materials.


The company is now marketing what it says is the first dedicated foundry established for supplying advanced Silicon-based materials.


Epitaxy services include RPCVD epitaxial growth on 4-, 6- and 8-inch substrates with the following descriptions:


* P-, As- and B-doped Silicon and SiGeSnC layers (doping level of 1015- 1019 cm-3 in Silicon. For Silicon alloys, doping capability is dependant on the material design) * Selective epitaxy of doped and undoped SiGeC layers on patterned substrates * Multilayer structures (superlattices) of Silicon or Germanium-based materials * Unstrained Germanium on Silicon * Compressive and tensile strained SiGe layers * Strained Silicon on relaxed SiGe layers * Tensile strained Germanium layers (on-going)


Further services are offered for materials characterisation of epitaxial films. These include:


* High-resolution scanning electron microscopy (HRSEM) in planar and cross-sectional view * High-resolution x-ray diffraction (HRXRD): Reciprocal lattice mapping (RLM), grazing angle measurement, strain measurement and layer profile over the substrate area. This data provides the interfacial roughness, composition and strain parallel to and perpendicular to the plane.


Tegal sells over 30 patents from Nanolayer Deposition Portfolio


To date, approximately $3.6 million has been received


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