Power Electronics ♦ news digest
According to Alex Lidow, Efficient Power Conversion CEO and co-author of this book, “Gallium nitride transistors provide a long-awaited displacement technology for MOSFETs, and much has been learned over the past several years about how to apply this new technology. In addition to increasing the efficiency of today’s power conversion systems, GaN transistors open up new applications such as RF envelope tracking and wireless power transmission that are much needed to keep pace with the ever-expanding communications industry and battery operated products. These new applications are enabled by the high frequency switching capability combined with the high voltage and high power capabilities of gallium nitride FETs.”
“GaN Transistors for Efficient Power Conversion” is available for $39.95 and can be purchased from the EPC website (www.epc-co. com), Digi-Key (
www.digikey.com) or Amazon (
www.amazon.com).
The four authors, Alex Lidow, Michael DeRooij, Johan Strydom and Yanping Ma are working for EPC, the first company to introduce enhancement mode GaN transistors. Collectively the authors have over ninety years experience working in power transistor design and application. All four authors have doctorates in scientific disciplines and are widely recognised published authors. They are pioneers in the emerging GaN transistor technology with Lidow concentrating on transistor process design, DeRooij and Strydom focusing on power transistor applications and Ma providing expertise on quality assurance and reliability.
1700V SiC Schottky diodes improve efficiency
The new devices extend the benefits of silicon carbide and enables the replacement of silicon diodes across a wide range of power levels
Cree has introduced a series of packaged diodes that deliver what it claims is the industry’s highest blocking voltage available in SiC Schottky technology.
Cree’s 1700V Z-Rec Schottky diodes virtually eliminate the reverse recovery losses suffered in silicon PiN diode alternatives, enabling ultra- efficient, smaller and lighter systems—all with improved reliability. These newly released packaged products extend the performance improvements and system cost savings enabled by Z-Rec technology at 1700V to lower-power applications designed with discrete components.
“Cree’s 1700V silicon carbide Schottky diodes are ideal for high-efficiency power electronics systems,” explained Cengiz Balkas, Cree vice president and general manager, Power and RF. “They provide all the proven benefits of Cree’s Z-Rec SiC Schottky diodes—zero reverse recovery losses, temperature-independent switching and higher frequency operation.”
While the 1700V bare die have been available for customers who design their own custom power modules, the new TO-247-2 packages allow customers to take advantage of SiC for lower-power 1700V designs, enable more design flexibility in choosing current levels, and support a faster time to market.
“The availability of 1700V SiC Schottky diodes provides a number of advantages for design engineers in high-voltage power applications,” added Balkas. “Silicon carbide diodes enable maximum power efficiency and better EMI performance.»
The switching loss improvement allows for increased system frequencies that can reduce the size of magnetic and capacitive components. Significant reductions in system size, weight and cost can be achieved. Moreover, the availability of 1700V SiC diodes can eliminate the need for stacking multiple lower voltage silicon diodes, thereby cutting component count, improving thermal
January / February 2012
www.compoundsemiconductor.net 197
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