This page contains a Flash digital edition of a book.
Novel Devices ♦ news digest


Semiconductor) and among other things it can be used in CMOS electronics for backend processing on a single chip.


Graphene, which was first demonstrated in 2004, has rapidly gone from curiositydriven to applied research.


The work is published in the paper, “A Subharmonic Graphene FET Mixer” , by O. Habibpour et al in IEEE Electron Device Letters, 33(1), 71 -73, January 2012. 10.1109/ LED.2011.2170655


The Swedish Foundation of Strategic Research supported this work.


Unison to advance steep ultra-shallow junction technology


The Dainippon Screen and Sematech partnership combines individual strengths to develop sub 14 nm semiconductor manufacturing using high mobility materials


Dainippon Screen Manufacturing has entered into a partnership to accelerate development and commercialisation of advanced semiconductor doping technology with Sematech, a global consortium of the world’s leading chip manufacturers.


Screen and Sematech will collaborate on techniques for monolayer doping and activation methods that are compatible with ultra-shallow junctions for planar and non-planar device technologies (e.g., FinFETs, nanowires, memories) in silicon and non-silicon high mobility materials.


To achieve faster transistor speeds and lower power dissipation, device fabrication will require innovative solutions to minimise leakage resulting from process damage and electrostatic control. Ultra-shallow, abrupt,


January / February 2012 www.compoundsemiconductor.net 237


damage-free junctions with high active dopant concentrations are essential for better off-state leakage control in modern highly scaled nano- electronics.


With the advent of non-planar device architectures and high mobility compound semiconductors, doping conformality and minimal lattice damage are increasingly important, and cooperative research efforts are needed to meet ITRS roadmap requirements. A promising defect-free and conformal doping alternative, monolayer doping, will be investigated, and developed for commercial use.


“This partnership with Screen is a key component of our overall strategy to develop critical infrastructure needed for major industry transitions. Innovative process technologies like monolayer doping are essential to enable transitions to non-planar and to non-silicon high mobility channels, while minimising processing induced damage, cost and complexity,” said Dan Armbrust, president and CEO of Sematech. “We are excited to combine our materials and process technology strengths with Screen’s leading tool engineering strengths to bring innovative solutions for next generation device manufacturers.”


“We are very pleased to collaborate with Sematech and its leading-edge industry partners on advanced doping techniques for next generation devices,” said Tadahiro Suhara, President of the Semiconductor Equipment Company at Screen. “We believe that this alliance could be a key driver for improving annealing processes and address associated defect issues for manufacturers to continue scaling of CMOS devices.”


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241