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SiC devices with power conversion integrated on a single chip


RENESAS ELECTRONICS has developed a Schottky barrier diode (SBD), the RJS6005TDPP, which uses SiC, a material considered to have great potential for use in power semiconductor devices. There is strong demand for more efficient power conversion in products using power switching circuits or inverter circuits. Therefore, the diodes used in these circuits need to provide faster switching speeds and low-voltage operation. The new device also incorporates technology developed jointly by Hitachi and Renesas Electronics, which contributed to achieving approximately 40 percent reduced low power consumption compared to Renesas Electronics’ existing power devices employing conventional silicon.


What’s more, the RJS6005TDPP SiC SBD has a reverse recovery time of 15 nanoseconds (standard value: measuring conditions IF = 15 A, di/dt = 300 A/µs), approximately 40 percent faster than that of existing Renesas’ silicon-based products. The reverse recovery time expresses the amount of time required to recover to the prescribed current value after the diode switches to the OFF state.


Renesas says that in addition, the reverse recovery time does not degrade when the temperature rises, enabling consistently low switching loss when operating in high- temperature environments. The new SiC- SBD has a voltage rating (forward voltage,


standard fully-molded TO-220, with which it is also pin compatible. This means that the device can easily be used as a replacement for conventional silicon diodes on existing printed wiring boards.


Figure 1: Backlight Cost Forecasts for 32”HD 60 Hz LCD TV Panel


The firm aims to provide customers with total solutions combining MCUs and Analogue & Power devices, and become the leading power device supplier. The company plans to enhance its kit solutions and compound semiconductor devices, with the new high-voltage SiC-SBD power devices at the core, supplemented by peripheral power supply control ICs, high- performance IGBTs, high-voltage super- junction MOSFETs, and photocouplers.


Figure 2: Forecast of LED Packages per Set for TVs


VF) of only 1.5 V, lower than that of existing silicon fast trigger diode products. Also, the temperature dependency of this characteristic is small, ensuring that a stable forward voltage can be obtained even under high-temperature conditions. This means that more compact heat dispersion measures can be used.


The RJS6005TDPP SiC-SBD uses a package equivalent to the industry-


The cost savings come from using roughly half as many LEDs, as well as the replacement of light guide plates, optical film, and other materials with lower cost diffuser plates and lens structures on the LEDs. The reduction in LEDs and other materials lowers power consumption, but requires a thicker profile. Brightness is lowered to 300 nits as opposed to 450 nits for edge-lit LED or CCFL, and lack of dimming reduces the contrast ratio and image quality. TV makers have been adopting 2-chip LED packages to reduce the number of packages and to reduce optical film use. The number of LED packages used per set with direct backlights is expected to be less than that of sets with edge backlights.


USCi to develop next generation SiC device with Aixtron Aixtron has announced that United Silicon


n- and p-type SiC epitaxial layers.”


Carbide, Inc. (USCi), based in Princeton, NJ, USA has ordered its VP2400 Hot-Wall CVD tool.


The order was received in the fourth quarter of 2011 and is planned to be delivered in the third quarter of 2012.


John Hostetler, Director of Engineering at USCi, comments, “Having evaluated the market for SiC epitaxy equipment, and based upon our success with merchant SiC epitaxy vendors utilising similar tools, we have selected the Aixtron VP2400HW system for the superior quality of both


“The versatility of the 2400 system will enable USCi to rapidly develop novel device designs. The system’s ability to achieve high growth rates make it an ideal platform to develop our next generation high voltage (5-15kV) SiC devices with thicknesses in excess of 100 microns.


Aixtron Planetary Reactors are becoming the standard for high volume SiC device production and our ownership of a 2400 will greatly facilitate our production process transfer to our merchant epitaxial wafer partners,” he continues.


10 www.compoundsemiconductor.net January/February 2012


Frank Wischmeyer, Vice President and Managing Director, Aixtron AB, Sweden adds, “Our SiC Planetary Reactor technology has continued to evolve over the past 10 years. Our extensive experience and know-how in the SiC deposition process is evident in the current design. Aixtron is pleased to partner with United Silicon Carbide as they advance SiC materials into next generation


USCi specialises in SiC devices including Schottky Barrier Diodes, JFETs, BJTs, Solid State Circuit Breakers, Power Modules, and Custom SiC integrated circuits.


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