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Power Electronics ♦ news digest


They have demonstrated four- and six-inch engineered GaN substrates and are launching pilot production lines in Itami, Japan, and Bernin, France to enable wider market adoption. The pilot lines will initially fabricate four-inch wafers with six-inch wafer production to quickly follow to support customer demand.


These substrates are produced by transferring ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates.


Leveraging Sumitomo Electric’s manufacturing technology for GaN wafers and Soitec’s proven Smart Cut layer-transfer technology, this strategic alliance project had originally produced two-inch wafers.


Sumitomo Electric will manufacture bulk free- standing GaN substrates in Japan for shipment to France, where Soitec will apply its Smart Cut layer-transfer process to generate the final engineered wafers with the same thermal expansion as GaN wafers. The resulting wafers have low defect density, enabling the manufacturing of advanced semiconductor devices at lower costs than bulk GaN wafers.


“Our partnership’s successful demonstration of four- and six-inch engineered GaN substrates’ scalability is a critical milestone, accomplished by applying very strong innovative capabilities from both sides,” said Frédéric Dupont, vice president of Soitec’s Specialty Electronics Business Unit. “The advanced substrates we are developing will allow the introduction of a new materials platform with novel and advanced functionalities.”


Yoshiki Miura, general manager of the Compound Semiconductor Materials Division at Sumitomo Electric, said, “With layer-transfer technology’s production readiness now proven for larger wafers, the substrates can be made even more cost effectively for large-volume production. We look forward to continuing our successful collaboration with Soitec to fulfil the requirements of the LED and energy


markets, which represent amazing business opportunities.”


Brian Bennett awarded as a fellow of the American Physical Society


His important contributions in materials physics over the last two decades include electro-optical effects in III-V compound semiconductors and as well as self-assembled quantum dots


Brian Bennett, a scientist at the Naval Research Laboratory is recognised by APS “for pioneering contributions to the epitaxial growth, characterisation, and design of narrow band- gap semiconductor heterostructures.”


Brian Bennett transfers samples into an MBE system prior to the growth of InAs quantum wells for high-speed transistors with ultra-low power consumption. (Photo: Jamie Hartman, U.S. Naval Research Laboratory)


His primary focus over the last several years has been in the design, growth, and characterisation of antimonide-based semiconductor heterostructures for application to high-frequency, low-power electronics. Bennett’s research (in collaboration with J. Brad Boos and colleagues) has established the Naval Research Laboratory as one of the world leaders in this field. His efforts on the design and epitaxial growth of high-electron


January / February 2012 www.compoundsemiconductor.net 201


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