This page contains a Flash digital edition of a book.
nitrides, arsenides, phosphides, antimonides, oxides, and novel materials such as graphene. In addition, a modular transfer backbone allows the system to be expanded to add other deposition and metrology technologies. The GENxplor is able to accommodate more configurations than many other MBE system on the market. The process chamber contains new technologies that expand flexibility and capabilities. The first system specifically designed to work with a full complement of bellows-free retractable sources, sources can be maintained, refilled, or changed in isolation from the growth chamber, allowing customers to use the system continuously for years or perhaps even decades without venting.


In addition, the single-frame design with cantilevered growth chamber allows users more convenient access and easier maintenance than ever before. Inside the process chamber, water-cooling is integrated to efficiently remove heat from the system. This can dramatically reduces liquid nitrogen consumption and lowers the operating cost of the system by thousands of dollars a year. Since its introduction in mid-2013, the GENxplor is the best-selling MBE system with five systems sold and counting to customers including University of Oklahoma, University of Nottingham, and McGill University.


holes or pillars on a hexagonal or square lattice, or linear gratings over large areas, with high throughput. The unique feature of PHABLE is the very large depth of focus for optical printing. Unlike any conventional proximity, contact or projection lithography technologies, the printed features are independent of the exposure gap over several hundred micrometres. Therefore printing on non-flat surfaces, such as LED wafers, is easily accomplished.


The EVG PHABLE technology is based on a Displacement Talbot lithography approach, producing features ranging from three microns down to 200 nm. This technology effectively provides no depth-of-focus limitation or stitching and can be used on substrates with poor total thickness variation. This


technology enables pattern substrates up to six inches in diameter in a single exposure step and therefore the system consistently maintains high patterning throughput independent of wafer size. The very large exposure gap between the mask and wafer, avoids process-related mask contamination.


The system can produce both one- dimensional patterns, such as lines and spaces, as well as two-dimensional patterns, such as hexagonal or square lattices. Thus, it supports a variety of approaches to enhance the light extraction from LEDs or to create patterned substrates. Possible applications include LED surface structuring, PSS, photonic crystal applications, nano-wire LEDs and optical gratings.


EVG PHABLE


The PHABLE (for “photonics enabler”) is a patented technology that is targeted for low-cost fabrication of periodic nanostructures that are mainly needed for patterned sapphire substrates (PSS) and photonic applications right now. PHABLE is a mask based UV photolithography technology, enabling existing photo resist and photomask infrastructure. It enables the creation of periodic structures, such as arrays of


66 www.compoundsemiconductor.net March 2014


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164