Lasers ♦ news digest
ASM stays in business with ALSI
ALSI has developed unique processes for dicing GaAs, high and ultra HB-LEDs, transistors and diodes
ASM Laser Separation International (ALSI) B.V. (“ASM ALSI”) will continue the business of Advanced Laser Separation International (ALSI) N.V. (“ALSI”) in Beuningen.
ASM ALSI intends to continue the business of ALSI as presently conducted including relationships with key customers, suppliers and other business partners.
ASM ALSI is a wholly owned subsidiary of ASM Pacific Technology Ltd (ASMPT), which is listed on the Hong Kong Stock Exchange and an assembly and packaging equipment supplier for the semiconductor and LED industries, and the world’s third largest SMT equipment supplier.
As a subsidiary of the ASMPT group, ASM ALSI brings both the financial and technological strength to the business of ALSI that it needs to move to the next phase of expansion and development.
Richard Boulanger will continue as the managing director of ASM ALSI and all key employees of ALSI have expressed their commitment to continue their employment with ASM ALSI.
Customers, suppliers and other business partners of ALSI will be informed shortly in more detail.
“We are very pleased to have ASM ALSI as a part of ASMPT. The multi-beam laser technology developed by ALSI offers customers unparalleled value. With the strong sales and service network of ASMPT, we can help to bring unique value to many customers at much faster pace”, comments WK Lee, CEO of ASMPT.
Richard Boulanger also comments that, “We are excited to be part of the ASMPT organisation. We believe that ASMPT’s excellent reputation and Global Sales and Service network will accelerate our Market Penetration especially for the Grooving Market as well as our other established markets. It will also increase our level of commitment and support to our customers. ”
ALSI introduced the Multi Beam Laser Technology and has developed unique processes for dicing GaAs, Transistors and Diodes, High and Ultra High Brightness LEDs. The firm has now introduced the Matrix Grooving Process for the IC Market.
Researchers at the University of Leeds claim to have taken the lead in the race to build the world’s most powerful terahertz laser chip.
A paper in the Institution of Engineering and Technology’s (IET) journal Electronics Letters reports that the Leeds team has exceeded a 1 Watt output power from a quantum cascade terahertz laser.
The new record more than doubles landmarks set by the Massachusetts Institute of Technology (MIT) and subsequently by a team from Vienna last year.
Terahertz waves, which lie in the part of the electromagnetic spectrum between infrared and microwaves, can penetrate materials that block visible light and have a wide range of possible uses including chemical analysis, security scanning, medical imaging, and telecommunications.
Widely publicised potential applications include monitoring pharmaceutical products, the remote sensing of chemical signatures of explosives in unopened envelopes, and the non-invasive detection of cancers in the human body.
However, one of the main challenges for scientists and engineers is making the lasers powerful and compact enough to be useful.
Edmund Linfield, Professor of Terahertz Electronics in the University’s School of Electronic and Electrical Engineering, explains, “Although it is possible to build large instruments that generate powerful beams of terahertz radiation, these instruments are only useful for a limited set of applications. We need terahertz lasers that not only offer high power but are also portable and low cost.”
The quantum cascade terahertz lasers being developed by Leeds are only a few square millimetres in size.
March 2014
www.compoundsemiconductor.net 119
World’s ‘most powerful` terahertz laser chip built
The chips are based on III-V technology and include layers of GaAs
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164