27 Enhancing coating uniformity
for electron beam lift-off To form the best fi lms, users of electron beam evaporators must understand how uniformity is infl uenced by the number of axes for substrate rotation, the insertion of shadow masks and the distance between source and substrate.
33 Aixtron’s new CEO takes
holistic approach Profi tability, greater customer focus and technological innovation top the agenda of Aixtron’s new boss Martin Goetzeler.
38 Faster, better III-N fi lm growth MOCVD reactors equipped with three-layer nozzles and
operating at atmospheric pressure can produce growth rates and doping ranges that manufacturers of GaN power electronics and ultraviolet LEDs are looking for.
44 Addressing the green gap with
a novel active region Capping wells with AlGaN and turning to InGaN barriers empowers LEDs to deliver effi cient emission at longer wavelengths.
48 Scaling semi-polar substrates Growth on patterned sapphire can lead to large,
low-cost semi-polar substrates. 52 Ultra-high voltage devices for
future power infrastructure Fast growth of high-quality SiC epilayers has paved the way to the fabrication of power devices with blocking voltages exceeding 20 kV.
58 Lighting up silicon photonics The etched facet laser is an attractive candidate for
silicon photonics, thanks to its small dimensions, freedom from hermetic sealing and its compatibility with passive alignment to waveguides.
62 CS industry Awards 2014 Its that time of year again and the shortlist for the
CS Industry Awards has been decided. We review the products that made it in 2014. Winners will be announced at the CS International Conference and reviewed in the next issue.
Magazine & Front Cover designed by Mitch Gaynor Volume 20 Issue 2 2014
GaN LEDs go from green to red
@compoundsemi
www.compoundsemiconductor.net
SiC diodes reach ultra-high voltages
Ferrotec’s Temescal systems Improving the uniformity of metal coatings
Battle for MOCVD sales intensifies
Cutting costs for semi-polar GaN
New boss’ plans for MOCVD firm
news 06 GaN LED revenue lifts 10.6 percent in 2013 07 InGaAs / SiGe SRAM cell project launched 08 Glasgow orders Oxford cluster system 10 TriQuint combines GaAs and silicon for mobile growth 11 Cree launch new high density LED arrays for LED lighting 12 GTAT licensed to use Kyma’s III-nitride technology 13 GaN device market to reach over $2.2 billion
33
news analysis 15 Cree: From hope to hit? 16 IGBT inventor crusades wide bandgap semiconductors 18 Kyma reveals ammonothermal-HVPE GaN growth plans 20 Rubicon reveals sapphire plans
research review 75 Ceramic foundation boosts brightness 76 Expanding the spectral range of QCLs 77 Refi ning periodically orientated GaN
News Review, News Analysis, Features, Research Review and much more. Free Weekly E News round up , go to
www.compoundsemiconductor.net
March 2014
www.compoundsemiconductor.net 5
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