RF Electronics ♦ news digest investing in leading modelling and simulation technology.
“Agilent’s software platforms offer a clear advantage for our design process,” says David Runton, vice president of engineering at Nitronex. “The usability and simulation advancements of ADS, combined with its superior device models and IC-CAP model extraction software, puts us in the best position to offer top-quality GaN parts to our customers. And, because Agilent’s tools offer a complete design flow, our design process will be more streamlined.”
“We appreciate Nitronex’s decision to transition to Agilent simulation and modeling tools for their future GaN designs,” said Charles Plott, marketing manager with Agilent EEsof EDA. “What is particularly gratifying is the positive acknowledgement about our usability advancements. We have gotten uniformly positive feedback from companies as they reengineer their design flows with the latest nonlinear modeling technologies and simulator advancements.”
ADS delivers a host of usability features to improve designer productivity and efficiency for all applications it supports, as well as capabilities specifically applicable to GaN design. Support for Agilent’s newly introduced artificial neural network-based model (extracted by IC- CAP device modelling software), for example, enables much more accurate FET modelling and simulation results for high-power GaN FET amplifiers.
Additionally, an electro-thermal simulator (based on a full 3-D thermal solver natively integrated into ADS) incorporates dynamic temperature effects to improve accuracy in “thermally aware” circuit simulation results.
IC-CAP features capabilities specifically geared toward high-frequency device modeling, including turnkey extraction of Agilent’s neural networked-based model as well as the Angelov-GaN model. GaN models in particular need to be well suited to deal with the impact of trapping and thermal effects on the device electrical characteristics.
Peregrine RF front-end system takes on GaAs
The firm’s Global 1 is claimed to be the first silicon based CMOS power amplifier to deliver gallium arsenide level performance for LTE devices
Peregrine Semiconductor, founder of RF SOI, is publicising the UltraCMOS Global 1, which the company says is the first reconfigurable RF front end (RFFE).
Peregrine’s UltraCMOS Global 1, the first reconfigurable March 2014
www.compoundsemiconductor.net 113
For the first time, 4G LTE platform providers and OEMs will be able to save time and money by creating a single SKU (stock keeping unit) design for global markets.
To support over forty frequency bands and a more than 5,000 fold increase in the number of possible operating states, a truly reconfigurable RFFE is now a requirement.
Peregrine says this level of reconfigurability is only feasible with a CMOS process.
Global 1 ’s entire system - multimode, multiband (MMMB) power amplifier (PA) ; post - PA switch, antenna switch, and antenna tuner - is based on Peregrine’s UltraCMOS 10 technology platform.
This platform leverages twenty five years of RF expertise with proven performance demonstrated by more than two billion RF SOI units shipped.
Also, Global 1 features the industry’s first LTE CMOS PA with the same raw performance as the leading GaAs PAs and has a 33 percent efficiency increase over other CMOS PAs.
“For years RF engineers have been looking for an integrated, CMOS RF front - end offering that performs as well as GaAs for mobile devices,” says Joe Madden, founder and principal analyst at Mobile Experts.
“Peregrine’s UltraCMOS technology has demonstrated GaAs - level efficiency performance at high power, which could be a game - changer.”
Global 1 RFFE System
On a single chip, Peregrine’s Global 1 RFFE system delivers the scalability to easily support higher band counts through low - loss switching and tuneability high isolation to solve interoperability issues; simple, digitally - controlled adaptation across mode sand bands and, most importantly, PA performance equivalent to GaAs.
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