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Page 8


www.us- tech.com


May, 2020


MIRTEC Selected by Bosch as 3D AOI Partner


Continued from page 1


in research and development, persist- ently focused on using state-of- the-art optics, lighting and laser technology in the development of its inspection solutions. “It is quite an honor for


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MIRTEC to be awarded this con- tract,” stated Holger Hansmann, director of sales and marketing, MIRTEC Europe. “As a premier manufacturer, BOSCH is recog- nized throughout the world for having the highest quality stan- dards. As such, the company is extremely selective in purchasing equipment that will add value to their business. In MIRTEC they have found a partner that offers the most technologically advanced inspection systems, supported by a truly global infrastructure and excellent company


procedures. We at MIRTEC are proud to have been selected, yet again, as BOSCH’s 3D AOI partner.”


MIRTEC MV-9 3D AOI system. Contact: MIRTEC Corp., 3


Morse Road, Oxford, CT 06478 % 203-881-5559 fax: 203-881-3322 E-mail: bdamico@mindspring.com Web: www.mirtec.com r


High-Efficiency Laser for Silicon Chips


Continued from page 1


tation and data centers, therefore, al- ready default to optical fiber whenever cables exceed a length of about 3.3 ft (1m). In the future, optic solutions will be in demand for shorter and shorter distances, due to increasing require- ments for example board-to-board or chip-to-chip data transfer. This ap- plies particularly to artificial intelli- gence (AI) systems where large data volumes must be transferred within a large network in order to train the chip and the algorithms. “The most crucial missing com-


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ponent is a cheap laser, which is necessary to achieve high data rates. An electrically pumped laser compatible with the silicon- based CMOS technology would be ideal,” explains Detlev Grütz- macher, director of Forschun - gszentrum Jülich’s Peter Grün- berg Institute. “Such a laser could then simply be shaped during the chip manufacturing process since the entire chip production is ultimately based on this technology.” But there is one problem. Pure


at Jülich’s Peter Grünberg Institute. The patented epitaxial growth


process developed by Jülich is used by several research groups all over the world. By further increasing the tin concentration, lasers have already been made that work not only at low temperatures but also at 32°F (0°C). “A high tin content, however,


decreases the laser efficiency. The laser then requires a relatively high pumping power. At 12 to 14 percent tin, we already need 100 to 300 kW/cm2,” explains Nils von den Dri- esch. “We thus tried to reduce the


SEM images: the GeSn layer is only a few micrometers thick and is applied to a “stressor layer” made of silicon nitride and an aluminum base.


silicon is an “indirect semiconductor” and, therefore, not suitable as a laser material. Different materials are currently used for manufacturing lasers. Generally, III-V compound semiconductors are used instead. “Their crystal lattice, however, has a completely different structure than that of silicon, which is a group IV el- ement. Laser components are cur- rently manufactured externally and must be integrated subsequently, which makes the technology expen- sive,” explains Grützmacher. In contrast, the new laser can be


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manufactured during the CMOS pro- duction process. It is based on germa- nium and tin, two group IV elements like silicon. Back in 2015, Jülich re- searchers showed that laser emission can be obtained in a germanium-tin system. The decisive factor in this is the high tin content: back then, it amounted to 12 percent, which is far above the solubility limit of 1 percent. “Pure germanium is, by its na-


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ture, an indirect semiconductor like silicon. The high concentration of tin is what turns it into a direct semicon- ductor for a laser source,” explains Dr. Dan Buca, working group leader


concentration of tin and compensate this by additionally stressing the ma- terial, which considerably improves the optical properties.” For the new laser, the re-


searchers reduced the tin content to approximately 5 percent — and si- multaneously decreased the neces- sary pumping power to 0.8 kW/cm2. This produces so little waste heat that this laser is the first group IV semiconductor laser that can be oper- ated not only in a pulsed regime but also in a continuous working regime, i.e. as a “continuous-wave laser.” “These values demonstrate that


a germanium-tin laser is technologi- cally feasible and that its efficiency matches that of conventional III-V semiconductor lasers grown on sili- con. This also brings much closer to an electrical pumped laser for indus- trial application that works at room temperature,” explains Grützmach- er. The new laser is currently limited to optical excitation and low temper- atures of about –220°F (–140°C). Such a laser would be interest-


ing not only for optical data transfer but also for a variety of other applica- tions since there are hardly any cheap alternatives for the correspon- ding wavelengths in the infrared range of 2 to 4 µm. Web: www.fz-juelich.de r


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