news digest ♦ LEDs million in the third quarter of fiscal 2011.
For its fourth quarter of fiscal 2011 ending August 31, 2011, SemiLEDs expects revenue in a range of $5.5 million to $6.5 million with GAAP net loss of $6.7 million to $6.4 million, or a loss of $0.25 to $0.23 per diluted share, based on an estimated 27.3 million diluted weighted average shares. GAAP gross margin is expected to be negative.
SemiLEDs develops and manufactures LED chips and LED components primarily for general lighting applications, including street lights and commercial, industrial and residential lighting. SemiLEDs sells blue, green and ultraviolet (UV) LED chips under the MvpLED brand.
“Our fiscal third quarter was challenging as pricing pressure and end demand weakness continued from the fiscal second quarter. However, we are seeing pricing stabilise,” said Trung Doan, Chairman and CEO of SemiLEDs.
“We remain focused on improving our cost structure by accelerating our efforts to transition to four inch wafer production at our Taiwan facility, continuing to ramp four inch production volume at China SemiLEDs, as well as supporting our customers to maximise the benefits of our metal vertical chip structures to reduce the total cost of ownership.”
GAAP net loss for the third quarter of fiscal 2011 was $5.1 million, or a loss of $0.19 per diluted share, compared to GAAP net income of $3.2 million, or $0.09 per diluted share, for the third quarter of fiscal 2010. The Company recorded a foreign currency transaction loss of $0.2 million in the quarter.
GAAP gross margin for the third quarter of fiscal 2011 was 9%, compared with 51% in the third quarter of fiscal 2010. Operating margin for the third quarter of fiscal 2011 was negative 70%, compared with 36% in the third quarter of fiscal 2010. Margins were negatively impacted by a charge of $1.1 million for the write-downs of inventory.
The Company’s cash and cash equivalents was $94.4 million at the end of the third quarter, compared to the prior quarter ending balance of $102.6 million. Cash used in operations was $3.3
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www.compoundsemiconductor.net August/September 2011
Phosphide based nanostructures could be used as LEDs
InAsP segments embedded in indium phosphide nanowires emit light, whose direction can be altered by adjusting the position of the InAsP active region.
Researchers from Netherlands based FOM Institute AMOLF, together with colleagues from Philips Research, Eindhoven University of Technology and Delft University of Technology, have made special compound semiconductor nanostructures that could be used as LEDs.
The scientists, led by Jaime Gomez Rivas, have demonstrated the directional emission of light by InAsP segments embedded in InP nanowires. The nanowires are arranged in a periodic array, forming a 2D photonic crystal slab.
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