news digest ♦ Power Electronics
Farnell. This is our first major catalogue outlet and we are excited about the new project opportunities it will drive.”
David Shen, Group Senior Vice President and Global Head of EDE and Technical Marketing of Premier Farnell said: “We are sure that our vast customer base will benefit from the leading performance of the SemiSouth parts. Their diodes and JFETs are a perfect fit for applications such as solar inverters, hybrid electric vehicles, industrial motors, computing and defence, and we will be able to introduce them to designers working in these areas.”
EPC expands its eGaN FET family
The firm’s second generation gallium nitride based power transistor delivers high frequency switching with enhanced performance at 200 V and 100 milliohms.
Efficient Power Conversion Corporation (EPC) is introducing the EPC2012 as the newest member of its second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly, being lead free, RoHS-compliant, and halogen free.
superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
“With the expansion of our family of eGaN FETs, we continue to raise the bar for the performance of gallium nitride FETs. In addition, this new generation of eGaN products are the industry’s first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” said Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2012 is priced at $2.10 and is immediately available through Digi-Key Corporation.
Mouser to distribute Cree products worldwide
For design engineers and manufacturers, this means faster access to Cree’s LED lighting solutions and silicon carbide power products on a global basis.
Mouser Electronics, a design engineering resource and global distributor for semiconductors and electronic components, has signed a global distribution agreement with giant Cree, a provider of LED lighting and SiC power products.
The EPC2012 FET is a 1.6 mm2 200 VDS device with a maximum RDS(ON) of 100 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first- generation EPC1012 eGaN device. The EPC2012 has an increased pulsed current rating of 15 A (compared with 12 A for the EPC1012), is fully enhanced at a lower gate voltage, and has superior dv/dt immunity due to an improved ratio of QGD/ QGS.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2012 is much smaller and claimed to have many times
150
www.compoundsemiconductor.net August/September 2011
The global agreement enables lighting designers worldwide to quickly find, compare, select, and order Cree’s latest products, including their innovative line of lighting-class XLamp LEDs, high brightness LEDs, LED modules, and power products.
Cree LED components and solutions are driving improvements worldwide in applications such as general lighting, electronic signs and signals. Cree also is among the world’s leading manufacturers of SiC-based diodes for power control and management, providing increased efficiency in a variety of applications from solar inverters to industrial motor drivers to wireless technologies.
Cree gains access to Mouser’s highly-successful design engineering marketing programs and to Mouser’s state-of-the-art fulfilment operations.
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