Power Electronics ♦ news digest customers.
“We are very pleased to have Industrifonden as an investor,” says Sol Voltaic CEO Bo Pedersen. “They are Sweden’s leading cleantech investor and have extensive experience in our area. With Industrifonden we now have a financially strong, knowledgeable investor that can help us to shift our expansion into higher gear.”
Power Electronics
EPC adds another eGaN FET to its family
The second generation 40 Volt, 16 milliohm EPC2014 gallium nitride transistor delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.
Efficient Power Conversion Corporation is introducing the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family.
is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
“In addition to increases in performance, this new generation enhancement mode gallium nitride FET is offered as lead-free, halogen-free and RoHS- compliant,” noted Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available through Digi-Key Corporation.
SemiSouth SiC transistors and JFETS go global
The firm’s products, which include silicon carbide transistors, are suited to solar inverters, hybrid electric vehicles, industrial motors, computing and defence are now available globally through Premier Farnell.
In line with the company’s focus on Electronic Design Engineers, driving business to the web and growth in emerging markets, Premier Farnell, has signed a worldwide stocking distribution agreement with SemiSouth Labs.
SemiSouth is a leading manufacturer of SiC diodes and transistor technology for high-power, high- efficiency, harsh-environment power management and conversion applications.
The EPC2014 is environmentally friendly, being lead free, RoHS-compliant, and halogen free.
The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 degrees C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014
Under the terms of the deal, SemiSouth’s SiC JFETs and diodes will be made available via the Farnell, Newark and element14 operations of Premier Farnell and will be stocked at all of Premier Farnell’s warehouses worldwide. Further product information documents are also made available via the element14, online community and the new agreement will also be supported via the element14 knode, Premier Farnell’s online design platform that is exclusively focused on the needs of electronic design engineers.
Dieter Liesabeths, SemiSouth’s Director of Sales said: “We are thrilled to be working with the a leading multi-channel distributor like Premier
August/September 2011
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