news review
Kyma adds n+ bulk GaN substrates to its portfolio
KYMA’S new n+ GaN substrate product line will boast a bulk resistivity specification of < 0.02 Ω −cm, which is two orders of magnitude lower in resistivity than Kyma’s offered n-type GaN.
What’s more, Kyma has successfully produced n+ bulk GaN wafers with measured carrier concentrations of up to 6 x 1018cm-3 and corresponding bulk resistivities of < 0.005 Ω –cm. The firm’s n-type GaN product is still being offered and, for distinction, is being relabelled as n- GaN (“nminus” GaN).
Kyma says that although its n- GaN remains an excellent starting material for a variety of materials and device studies, its
n+ GaN offers benefits for vertical devices as well as reduced contact resistance for all devices. Key advantages for vertical power devices include ultra-low on- resistance as well as decreased parasitic resistance. Key advantages for LEDs include low vertical resistance and the mitigation of current crowding effects.
“We are pleased to respond to our customers’ requests for more conductive substrates,” said Jacob Leach, Kyma Characterisation and Device Engineer. “The high electron concentrations in this new product line directly support higher performance and reliability for a number of device applications of great commercial interest.”
Tamara Stephenson, Kyma’s Technical Sales Engineer, added, “We are happy to offer these new substrates in form factors of 10 mm x 10mm squares and 18 mm x 18 mm squares. Additionally, the development of commercially available 2” diameter and larger n+ bulk GaN substrates is underway.”
Kyma is a supplier of crystalline GaN and AlN materials for a broad range of high performance nitride semiconductor device applications. The market for nitride semiconductor devices is expected to surpass $90B over the long term, including over $60B in visible lighting applications and over $30B in power electronics applications.
Ascent Solar climbs higher with strategic alliance in China
Ascent Solar Technologies and TFG Radiant Group have signed a $275 million plus royalties strategic partnership that includes investments by TFG Radiant into Ascent. They have also signed a joint development agreement to establish manufacturing facilities in East Asia. Under the agreement, TFG Radiant has committed $165 million for the initial East Asia FAB, bringing the total deal value to about $450 million plus royalties.
Ascent has agreed to exclusively license its technology for fabrication and distribution of flexible, lightweight CIGS photovoltaic modules to TFG Radiant for East Asia. The East Asia territory includes China, Taiwan, Hong Kong, Malaysia, Indonesia, Thailand, Korea, and Singapore. Ascent retains all rights for the U.S. and rest of the world.
Pursuant to the strategic alliance, in addition to continuing to ramp its existing FABs and improve its technology, Ascent will develop a next-generation PV production line in Colorado. Based on
Ascent’s technology, TFG Radiant will build its first fabrication facility in China, with a projected direct investment of over $165 million. This FAB is expected to have an annual production capacity of 100 MW.
TFG Radiant will cover consulting costs for Ascent personnel in helping to install and bring online the FAB in China. Ascent will receive partial ownership of the China FAB and royalties on all sales from that FAB. TFG Radiant also has the right to build, at its cost, multiple additional FABs for the East Asian markets and Ascent will receive partial ownership, royalties and consulting fees for all such FABs. Ascent will receive license fees and non-recurring engineering fees from TFG Radiant. In addition, Ascent will receive milestone payments tied to the achievement of certain production and cost goals. The total of such milestone payments could exceed $250 million over multiple years.
“This partnership is transformative in nature. It is based on the complementary expertise of TFG Radiant, in metal roofing
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www.compoundsemiconductor.net August / September 2011
and construction in one of the world’s largest markets, and Ascent, in market leading flexible CIGS technology,” said Amit Kumar, Chairman of Ascent.
“We are excited to be working with TFG Radiant,” said Ron Eller, President and CEO of Ascent. “They bring expertise in innovative roof design and materials, balance of system design, volume manufacturing, and broad access to the East Asian markets. While we continue to ramp our current Colorado FABs, this arrangement enables us to work with a key partner to build the first non-U.S. and largest CIGS FAB based on Ascent’s unique, flexible, monolithically integrated technology. TFG Radiant has the market leadership, distribution channels, installation capability and infrastructure, and established and highly motivated customer base that will accelerate the market for Ascent’s CIGS products in East Asia. TFG Radiant’s major financial and strategic commitments to this alliance are a strong endorsement of Ascent’s flexible CIGS technology.”
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