news digest ♦ Power Electronics
GeneSiC wins R&D100 award for SiC devices
The firm has been recognised for its silicon carbide products used in grid-connected solar and wind energy applications.
R&D Magazine has selected GeneSiC Semiconductor of Dulles, Virginia as a recipient of the prestigious 2011 R&D 100 Award for the commercialisation of SiC devices with high voltage ratings.
The innovator of SiC based power devices was honoured last week with the prestigious 2011 R&D 100 Award. This award recognises GeneSiC for introducing one of the most significant, newly introduced research and development advances among multiple disciplines during 2010.
R&D Magazine recognised GeneSiC’s Ultra- High Voltage SiC thyristor for its ability to achieve blocking voltages and frequencies never utilised before towards power electronics demonstrations.
This will allow new inventions and product developments within renewable energy, solar inverters, wind power inverters, and energy storage industries. Ranbir Singh, President of GeneSiC Semiconductor commented, “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realise the benefits of SiC thyristors. These first generation SiC thyristors utilise the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC thyristors.”
Singh continued,“ We intend to release future generations of SiC thyristors optimised for Gate- controlled Turn Off capability and pulsed power capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” Since this product was launched in October 2010, GeneSiC has booked orders from multiple customers towards demonstration of advanced power electronics hardware using these SiC thyristors.
GeneSiC continues to develop its family of SiC thyristor products. The R&D on early version for power conversion applications were developed through SBIR funding support from US DOE. More advanced, pulsed power optimised SiC thyristors are being developed under another SBIR contract with ARDEC, US Army. Using these technical developments, internal investment from GeneSiC and commercial orders from multiple customers, GeneSiC was able to offer these UHV thyristors as commercial products.
Figure. GeneSiC silicon carbide thyristor
GeneSiC says the voltage ratings of > 6.5kV, on-state current rating of 80 A and operating frequencies of > 5 kHz are much higher than those previously introduced in the marketplace. These capabilities achieved by GeneSiC’s thyristors critically enable power electronics researchers to develop grid-tied inverters, Flexible AC Transmission Systems and High Voltage DC Systems.
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www.compoundsemiconductor.net August/September 2011
The 49th annual technology competition run by R&D Magazine evaluated entries from various companies and industry players, research organizations and universities around the world. The magazine’s editors and a panel of outside experts served as judges, evaluating each entry in terms of its importance to the world of science and research.
According to R&D Magazine, winning an R&D 100 Award provides a mark of excellence known to industry, government, and academia as proof that the product is one of the most innovative ideas of the year. This award recognises GeneSiC as a
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