Power Electronics ♦ news digest
The award-winning distributor offers 17 customer support locations across multiple continents with 42 country websites. Mouser’s Product Knowledge Centres and application guidance tools will give lighting designers easy access to view Cree’s product advantages, technical specifications and data sheets.
“Cree is a progressive company known for top-of- the-line innovations in the LED industry and we are pleased to align with them,” says Russell Rasor, Mouser’s vice-president of advanced technology. “For design engineers and manufacturers, this means faster access to Cree’s LED lighting solutions and SiC power products on a global basis.”
“With the distribution might of Mouser behind our products, our customers will not only have worldwide access to our products, but will also have the search and comparison resources available through Mouser’s award-winning online catalogues and websites,” says Mark Despotes, Cree vice president of global channels. “The service and support Mouser offers as an authorised worldwide distributor is invaluable to us and to our customers.”
The agreement reinforces Mouser’s commitment to support new solid-state lighting designs by offering a comprehensive line-up of Cree LED components. In support of Cree’s products, Mouser says it will provide engineers with the most innovative optical and mechanical products along with IC-based LED drivers from key suppliers such as Texas Instruments, On Semiconductor, STMicroelectronics and Maxim Integrated Products. This strategically positions Mouser, the design-fulfilment distributor, to deliver advanced lighting technology components to enable a successful new design project.
Kyma adds n+ bulk GaN substrates to its portfolio
The new gallium nitride substrates come in form factors of 10 mm x 10mm squares and 18 mm x 18 mm squares. The firm is also developing 2” diameter and larger n+ bulk GaN substrates for volume production.
Kyma’s new n+ GaN substrate product line will boast a bulk resistivity specification of < 0.02 Ω
-cm, which is two orders of magnitude lower in resistivity than Kyma’s previously offered n-type GaN.
What’s more, Kyma has successfully produced n+ bulk GaN wafers with measured carrier concentrations of up to 6 x 1018cm-3and corresponding bulk resistivities of < 0.005 Ω –cm. The firm’s n-type GaN product is still being offered and, for distinction, is being relabelled as n- GaN (“nminus” GaN).
Kyma says that although its n- GaN remains an excellent starting material for a variety of materials and device studies, its n+ GaN offers benefits for vertical devices as well as reduced contact resistance for all devices. Key advantages for vertical power devices include ultra-low on-resistance as well as decreased parasitic resistance. Key advantages for LEDs include low vertical resistance and the mitigation of current crowding effects.
“We are pleased to respond to our customers’ requests for more conductive substrates,” said Jacob Leach, Kyma Characterisation and Device Engineer. “The high electron concentrations in this new product line directly support higher performance and reliability for a number of device applications of great commercial interest.”
Tamara Stephenson, Kyma’s Technical Sales Engineer, added, “We are happy to offer these new substrates in form factors of 10 mm x 10mm squares and 18 mm x 18 mm squares. Additionally, the development of commercially available 2” diameter and larger n+ bulk GaN substrates is underway.”
Kyma is a supplier of crystalline GaN and AlN materials for a broad range of high performance nitride semiconductor device applications.
The market for nitride semiconductor devices is expected to surpass $90B over the long term,
August/September 2011
www.compoundsemiconductor.net 151
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